Abstract: Methods and resulting structure of forming a gas dielectric structure in an interconnect structure are disclosed. In one embodiment, the method includes providing the interconnect structure including at least one interconnect layer having a dielectric, at least one conductor and a first cap layer; and causing the dielectric to contract to form the gas dielectric structure by exposing the interconnect structure to radiation. The radiation can be electron beam radiation or UV radiation. In one embodiment, an interface-breaking enhancing film can be used to selectively locate the gas dielectric structures formed.