Abstract: A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CXHY gas which is preferably ethylene. Optionally, hydrogen may be added to the CXHY gas. Another alternative is a two step plasma process involving a first plasma treatment of CXHY or CXHY combined with H2 and a second plasma treatment with H2. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.

Abstract: A method for forming a dielectric insulating layer with increased hydrophilicity for improving adhesion of an adjacently deposited material layer in semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing the dielectric insulating layer; and, subjecting the dielectric insulating layer including an exposed surface to a hydrophilicity increasing treatment including at least one of a dry plasma treatment and a wet process including contacting the exposed surface with a hydrophilicity increasing solution including a surfactant said wet process followed by a baking process to improve an adhesion of an adjacently deposited material layer.