Patents by Inventor Aaron W. Freese

Aaron W. Freese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit, construction of integrated circuitry, and method of forming an array
    Patent number: 11355348
    Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: June 7, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Gurpreet Lugani, Kyle B. Campbell, Mario J. Di Cino, Aaron W. Freese, Alex Kogan, Kevin R. Shea
  • Integrated Circuit, Construction of Integrated Circuitry, and Method of Forming an Array
    Publication number: 20200266071
    Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating.
    Type: Application
    Filed: April 14, 2020
    Publication date: August 20, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Gurpreet Lugani, Kyle B. Campbell, Mario J. Di Cino, Aaron W. Freese, Alex Kogan, Kevin R. Shea
  • Integrated circuit, construction of integrated circuitry, and method of forming an array
    Patent number: 10692727
    Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: June 23, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Gurpreet Lugani, Kyle B. Campbell, Mario J. Di Cino, Aaron W. Freese, Alex Kogan, Kevin R. Shea
  • Integrated Circuit, Construction Of Integrated Circuitry, And Method Of Forming An Array
    Publication number: 20200035498
    Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating.
    Type: Application
    Filed: July 24, 2018
    Publication date: January 30, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Gurpreet Lugani, Kyle B. Campbell, Mario J. Di Cino, Aaron W. Freese, Alex Kogan, Kevin R. Shea