Abstract: An optoelectronic device for quadrature-amplitude modulation (QAM) and a method of modulating light according to the same. The device comprising: an input waveguide; two intermediate waveguides, each coupled to the input waveguide via an input coupler; and an output waveguide, coupled to each of the intermediate waveguides via an output coupler; wherein each intermediate waveguide includes a modulating component connected in series with a phase shifting component, and each modulating component is connected to a respective electronic driver, the electronic drivers together being operable to produce a QAM-N modulated output from light entering the device from the input waveguide.

Abstract: A discrete wavelength tunable laser having an optical cavity which comprises: a reflective semiconductor optical amplifier (SOA); a demultiplexer (Demux) having a single input and a plurality of outputs, the Demux configured to receive the output of the SOA and to produce a plurality of fixed spectral passbands within the gain bandwidth of the SOA; one or more tunable distributed Bragg reflector(s) (DBR(s)) arranged to receive the outputs of the Demux, each tunable DBR configured to select a reflective spectral band within the gain bandwidth of the SOA upon application of a bias current; wherein the SOA forms the back end mirror of the optical cavity; the one or more tunable DBRs form the front end mirror of the optical cavity; and wherein the lasing channel of the discrete wavelength tunable laser is chosen by the overlap of the selected reflective spectral band of one of the one or more tunable DBRs with a fixed spectral passband of the Demux.

Abstract: A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide, wherein the electro-optically active stack is separated from an insulator layer of the electro-optically active device by a seed layer; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Abstract: A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Abstract: A silicon based electro-optically active device and method of production thereof. The device comprising: a silicon-on-insulator (SOI) layer; an electro-optically active stack, disposed on top of the SOI layer: a first epitaxially grown structure comprising a first passive waveguide and a second epitaxially grown structure comprising a second passive waveguide, the first and second passive waveguides being disposed adjacent to respective sides of the electro-optically active stack, wherein the first and second passive waveguides are configured to edge couple light from the first passive waveguide into the electro-optically active stack and from the electro-optically active stack into the second passive waveguide; and an evanescent coupling structure, for evanescently coupling light between the SOI layer and the first and second passive waveguides.

Abstract: An optoelectronic device and a method of manufacturing the same. The device comprising: a multi-layered optically active stack; an input waveguide, arranged to guide light into the stack; an output waveguide, arranged to guide light out of the stack; and anti-reflective coatings, located between both the input waveguide and the stack and the stack and the output waveguide; wherein the input waveguide and output waveguide are formed of silicon nitride.

Abstract: A discrete wavelength tunable laser capable of switching between a plurality of lasing channels of different wavelengths, the tunable laser comprising: a semiconductor optical amplifier (SOA); a wavelength demultiplexer (Demux), having a Demux input which receives the output from the SOA, and a plurality of Demux outputs, each Demux output defining a different spatial path for a respective lasing channel; each of the respective lasing channels being within the bandwidth of the SOA; a reflector located within each spatial path for reflecting light of the respective lasing channel; and a lasing suppression mechanism located within each lasing channel; wherein one or more desired lasing channels are selected by application of the lasing suppression mechanism in each spatial path other than the one or more spatial paths corresponding to the one or more desired lasing channels.

Abstract: A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 ?m to 13 ?m.

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Abstract: An interposer chip for coupling light between an array of fibers and an array of optical waveguides on a second photonic chip. The interposer chip has an array of V-grooves for aligning the ends of the fibers to corresponding ends of an array of optical waveguides on the interposer chip. Each optical waveguide has a taper with a first end and a second end, the first end being configured to support an optical mode that couples efficiently to the mode of an optical fiber. The taper reduces the vertical mode size, so that the mode supported by the second end of the taper may be efficiently coupled to a 3-micron thick optical waveguide on the second photonic chip. The interposer chip further has a hard stop having a flat surface parallel to the optical waveguides on the interposer chip, at the interface to the second chip.

Abstract: A silicon-on-insulator chip including an arrayed waveguide grating (AWG) and an array of detector remodulators (DRMs) in a planar arrangement with the AWG such that the modulators or modulators and detectors of said DRMs are located within the same plane as the waveguides of the AWG; and wherein each DRM is located at an input or output of the AWG.

Abstract: A discrete wavelength tunable laser having an optical cavity which comprises: a reflective semiconductor optical amplifier (SOA); a demultiplexer (Demux) having a single input and a plurality of outputs, the Demux configured to receive the output of the SOA and to produce a plurality of fixed spectral passbands within the gain bandwidth of the SOA; one or more tunable distributed Bragg reflector(s) (DBR(s)) arranged to receive the outputs of the Demux, each tunable DBR configured to select a reflective spectral band within the gain bandwidth of the SOA upon application of a bias current; wherein the SOA forms the back end mirror of the optical cavity; the one or more tunable DBRs form the front end mirror of the optical cavity; and wherein the lasing channel of the discrete wavelength tunable laser is chosen by the overlap of the selected reflective spectral band of one of the one or more tunable DBRs with a fixed spectral passband of the Demux.

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

Abstract: An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

Abstract: An optoelectronic packet switch comprising: switch input(s) for receiving optical packet signals; a passive optical router; a control unit; and a plurality of detector-remodulators (DRMs) configured to receive signals from the switch input(s) and to generate modulated optical signals for transmission to the input ports of the passive optical router. Each DRM comprising: detector(s) for converting an optical packet-signal received at the switch input(s) into an electrical packet-signal; modulator(s) for generating the modulated optical signals.

Abstract: A multisection digital supermode-distributed Bragg reflector (MSDS-DBR) comprising: a plurality P of digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections; wherein each DS-DBR grating section comprises a plurality M of grating sub-regions, each sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.

Abstract: A multisection digital supermode-distributed Bragg reflector (MSDS-DBR) comprising: a plurality P of digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections; wherein each DS-DBR grating section comprises a plurality M of grating sub-regions, each sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.

Abstract: A silicon-on-insulator chip including an arrayed waveguide grating (AWG) and an array of detector remodulators (DRMs) in a planar arrangement with the AWG such that the modulators or modulators and detectors of said DRMs are located within the same plane as the waveguides of the AWG; and wherein each DRM is located at an input or output of the AWG.