Abstract: Systems, apparatuses, and methods for classification based automated instance management are disclosed. Classification based automated instance management may include automatically commissioning an application instance based on a plurality of classification metrics, and automatically monitoring the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include identifying a plurality of instance monitoring policies associated with the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include automatically suspending the application instance plurality of instance monitoring policies and automatically decommissioning the application based on the plurality of instance monitoring policies.

Abstract: Systems, apparatuses, and methods for classification based automated instance management are disclosed. Classification based automated instance management may include automatically commissioning an application instance based on a plurality of classification metrics, and automatically monitoring the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include identifying a plurality of instance monitoring policies associated with the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include automatically suspending the application instance plurality of instance monitoring policies and automatically decommissioning the application based on the plurality of instance monitoring policies.

Abstract: Systems, apparatuses, and methods for classification based automated instance management are disclosed. Classification based automated instance management may include automatically commissioning an application instance based on a plurality of classification metrics, and automatically monitoring the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include identifying a plurality of instance monitoring policies associated with the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include automatically suspending the application instance plurality of instance monitoring policies and automatically decommissioning the application based on the plurality of instance monitoring policies.

Abstract: Systems, apparatuses, and methods for classification based automated instance management are disclosed. Classification based automated instance management may include automatically commissioning an application instance based on a plurality of classification metrics, and automatically monitoring the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include identifying a plurality of instance monitoring policies associated with the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include automatically suspending the application instance plurality of instance monitoring policies and automatically decommissioning the application based on the plurality of instance monitoring policies.

Abstract: Systems, apparatuses, and methods for classification based automated instance management are disclosed. Classification based automated instance management may include automatically commissioning an application instance based on a plurality of classification metrics, and automatically monitoring the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include identifying a plurality of instance monitoring policies associated with the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include automatically suspending the application instance plurality of instance monitoring policies and automatically decommissioning the application based on the plurality of instance monitoring policies.

Abstract: One illustrative method disclosed herein involves, among other things, decomposing an initial circuit layout into first and second mask patterns, for the first mask pattern, identifying a first four-polygon pattern in the first mask pattern that violates a multi-polygon constraint rule, wherein the first four-polygon pattern comprises four polygons positioned side-by-side in the first mask pattern, and recoloring one or two of the polygons in the first four-polygon pattern in the first mask pattern to the second mask pattern to eliminate the first four-polygon pattern from the first mask pattern without introducing any design rule violations in the initial circuit layout.

Abstract: Systems, apparatuses, and methods for classification based automated instance management are disclosed. Classification based automated instance management may include automatically commissioning an application instance based on a plurality of classification metrics, and automatically monitoring the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include identifying a plurality of instance monitoring policies associated with the application instance based on the plurality of classification metrics. Automatically monitoring the application instance may include automatically suspending the application instance plurality of instance monitoring policies and automatically decommissioning the application based on the plurality of instance monitoring policies.

Abstract: One illustrative method disclosed herein involves, among other things, decomposing an initial circuit layout into first and second mask patterns, for the first mask pattern, identifying a first four-polygon pattern in the first mask pattern that violates a multi-polygon constraint rule, wherein the first four-polygon pattern comprises four polygons positioned side-by-side in the first mask pattern, and recoloring one or two of the polygons in the first four-polygon pattern in the first mask pattern to the second mask pattern to eliminate the first four-polygon pattern from the first mask pattern without introducing any design rule violations in the initial circuit layout.

Abstract: A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.

Abstract: A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.

Abstract: A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.

Abstract: A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.

Abstract: A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scrubber.