Abstract: Apparatus and method for reducing read disturbed data in a non-volatile memory (NVM). Read operations applied to a first location in the NVM are counted to accumulate a read disturb count (RDC) value. Once the RDC value reaches a predetermined threshold, a flag bit is set and a first bit error statistic (BES) value is evaluated. If acceptable, the RDC value is reduced and additional read operations are applied until the RDC value reaches the predetermined threshold a second time. A second BES value is evaluated and data stored at the first location are relocated if an unacceptable number of read errors are detected by the second BES value. Different thresholds are applied to the first and second BES values so that fewer read errors are acceptable during evaluation of the second BES value as compared to the first BES value.

Abstract: Systems and methods presented herein provide for open block handling of an SSD. In one embodiment, an SSD includes a buffer, and an MLC flash device. The SSD also includes a controller operable to write data in the buffer based on an Input/Output (I/O) request (e.g., from a host), to begin copying the data from the buffer to a block of the MLC flash device, to copy a portion of the data associated with open word lines of the block to another location in the buffer after a power cycle, and to update a lookup table for the copied portion of the data with the other location so that the copied portion of the data can be accessed via a subsequent I/O request.

Abstract: Systems and methods presented herein provide for open block handling of an SSD. In one embodiment, an SSD includes a buffer, and an MLC flash device. The SSD also includes a controller operable to write data in the buffer based on an Input/Output (I/O) request (e.g., from a host), to begin copying the data from the buffer to a block of the MLC flash device, to copy a portion of the data associated with open word lines of the block to another location in the buffer after a power cycle, and to update a lookup table for the copied portion of the data with the other location so that the copied portion of the data can be accessed via a subsequent I/O request.

Abstract: Apparatus and method for reducing read disturbed data in a non-volatile memory (NVM). Read operations applied to a first location in the NVM are counted to accumulate a read disturb count (RDC) value. Once the RDC value reaches a predetermined threshold, a flag bit is set and a first bit error statistic (BES) value is evaluated. If acceptable, the RDC value is reduced and additional read operations are applied until the RDC value reaches the predetermined threshold a second time. A second BES value is evaluated and data stored at the first location are relocated if an unacceptable number of read errors are detected by the second BES value. Different thresholds are applied to the first and second BES values so that fewer read errors are acceptable during evaluation of the second BES value as compared to the first BES value.

Abstract: Systems and methods presented herein provide for open block handling of an SSD. In one embodiment, an SSD includes a buffer, and an MLC flash device. The SSD also includes a controller operable to write data in the buffer based on an Input/Output (I/O) request (e.g., from a host), to begin copying the data from the buffer to a block of the MLC flash device, to copy a portion of the data associated with open word lines of the block to another location in the buffer after a power cycle, and to update a lookup table for the copied portion of the data with the other location so that the copied portion of the data can be accessed via a subsequent I/O request.

Abstract: Cross-points of flash memory cell voltage distributions are determined by reading data from a portion of the flash memory two or more times using two or more different candidate reference voltages and determining corresponding decision patterns. The frequency of occurrence of the decision patterns in the data read from the flash memory is used to conceptually construct a histogram. The histogram is used to estimate the cross-points. Employing decision patterns enables multiple cross-point voltages to be determined with a minimum of read operations.

Abstract: Cross-points of flash memory cell voltage distributions are determined by reading data from a portion of the flash memory two or more times using two or more different candidate reference voltages and determining corresponding decision patterns. The frequency of occurrence of the decision patterns in the data read from the flash memory is used to conceptually construct a histogram. The histogram is used to estimate the cross-points. Employing decision patterns enables multiple cross-point voltages to be determined with a minimum of read operations.

Abstract: Upon a read error, a flash memory controller adjusts a candidate reference voltage on successive read retries until either a read error no longer occurs or an optimal reference voltage is attained. Optimal reference voltages correspond to cross-points of flash memory cell voltage distributions. Cross-points can be determined by using different candidate reference voltages to read data from the memory and determining corresponding decision patterns. The frequency of occurrence of the decision patterns in the data read from the memory is used to conceptually construct a histogram. The histogram is used to estimate when a candidate reference voltage has been adjusted to a cross-point.