Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: The invention—microchannel avalanche diode, belongs to semiconductor photosensitive devices, and specifically to semiconductor avalanche diodes with internal amplification of the signal. The proposed microchannel avalanche diode can be used for registration of super feeble light pulses, including up to individual photons, and also gamma quants and charged particles in devices for medical gamma tomography, radiation monitoring, and nuclear physics experiments. The characteristic feature of the proposed device is that in the avalanche photodiode, containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate, at least one two-dimensional matrix of separate solid-state areas—islets with enhanced conductivity for the creation of potential micro-holes is formed.