Patents by Inventor Abdul R. Ahmed

Abdul R. Ahmed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated ESD protection method and system
    Patent number: 6534422
    Abstract: An ESD structure is created on an integrated circuit by providing a conductive polymer material between a signal line and a supply node or ground reference. The conductive polymer material becomes conductive when an electric field of sufficient intensity is applied. In one embodiment, the concentration of conductive particles of the conductive polymer material is empirically determined so that the resulting film becomes conducting at a predetermined threshold voltage. The conductive polymer is applied in liquid form on the wafer surface using a silk-screen printing process or a spin-on process and then cured. The conductive polymer layer can be adapted for use in multilevel metallization systems.
    Type: Grant
    Filed: June 10, 1999
    Date of Patent: March 18, 2003
    Assignee: National Semiconductor Corporation
    Inventors: Steven Ichikawa, Boonmi Mekdhanasarn, Abdul R. Ahmed
  • Integrated ESD protection method and system
    Patent number: 6344412
    Abstract: An ESD structure is created on an integrated circuit by providing a conductive polymer material between a signal line and a supply node or ground reference. The conductive polymer material becomes conductive when an electric field of sufficient intensity is applied. In one embodiment, the concentration of conductive particles of the conductive polymer material is empirically determined so that the resulting film becomes conducting at a predetermined threshold voltage. The conductive polymer is applied in liquid form on the wafer surface using a silk-screen printing process or a spin-on process and then cured. The conductive polymer layer can be adapted for use in multilevel metallization systems.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: February 5, 2002
    Assignee: National Semiconductor Corporation
    Inventors: Steven Ichikawa, Boonmi Mekdhanasarn, Abdul R. Ahmed