Abstract: An apparatus and method for determining a physical parameter of features on a substrate by illuminating the substrate with an incident light covering an incident wavelength range ??, e.g., from 190 nm to 1000 nm, where the substrate is at least semi-transparent. A response light received from the substrate and the feature is measured to obtain a response spectrum of the response light. Further, a complex-valued response due to the feature and the substrate is computed and both the response spectrum and the complex-valued response are used in determining the physical parameter. The response light is reflected light, transmitted light or a combination of the two. The complex-valued response typically includes a complex reflectance amplitude, a complex transmittance amplitude or both. The apparatus and method take into account the effects of vertical and lateral coherence length and are well suited for examining adjacent features.

Abstract: An apparatus and method for determining a physical parameter of features on a substrate by illuminating the substrate with an incident light covering an incident wavelength range &Dgr;&lgr;, e.g., from 190 nm to 1000 nm, where the substrate is at least semi-transparent. A response light received from the substrate and the feature is measured to obtain a response spectrum of the response light. Further, a complex-valued response due to the feature and the substrate is computed and both the response spectrum and the complex-valued response are used in determining the physical parameter. The response light is reflected light, transmitted light or a combination of the two. The complex-valued response typically includes a complex reflectance amplitude, a complex transmittance amplitude or both. The apparatus and method take into account the effects of vertical and lateral coherence length and are well suited for examining adjacent features.

Abstract: According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers. According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage.

Abstract: According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers. According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage.

Abstract: A metal-to-metal antifuse comprises a lower electrode comprising a first metal layer in an integrated circuit, a first barrier layer formed from a layer of TiW:N disposed over the lower electrode, a layer of antifuse material formed from amorphous silicon over the first barrier layer, a second barrier layer formed from a layer of TiW:N disposed over the layer of antifuse material, said second barrier layer, and an upper electrode over the second barrier layer, the upper electrode comprising a second metal layer in the integrated circuit.

Abstract: According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers, According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage.

Abstract: An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.

Abstract: An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first metal electrode, a first antifuse dielectric layer, preferably silicon nitride, disposed on the lower first electrode and an antifuse layer, preferably amorphous silicon, disposed on the first dielectric layer. An inter-layer dielectric layer is disposed on the antifuse layer and includes an antifuse via formed completely therethrough. A second antifuse dielectric layer, preferably silicon nitride, is disposed over the amorphous silicon layer in the antifuse via, and an upper second metal electrode is disposed over the second dielectric layer in the antifuse via.

Abstract: A static-charge protection device for an antifuse includes an additional second-sized aperture smaller in area than the antifuse apertures disposed in the same inter-electrode dielectric layer. Antifuse material is disposed in the second-sized aperture, and the upper electrode extends over the second aperture as well as the first aperture. A preferred process for fabricating the protection device utilizes the step of forming the smaller apertures and forming their antifuse material layers simultaneously with forming the antifuse apertures. A static-charge protection device for an antifuse device includes an additional second-sized aperture larger in area than the first-sized antifuse apertures. Metal plug material is deposited and etched back. A layer of amorphous silicon antifuse material is formed and defined over the first and second sized apertures, the portion formed over the larger partially filled antifuse protection device cell being thinner.

Abstract: A metal-to-metal antifuse comprises a lower electrode comprising a first metal layer in an integrated circuit, a first barrier layer formed from a layer of TiW:N disposed over the lower electrode, a layer of antifuse material formed from amorphous silicon over the first barrier layer, a second barrier layer formed from a layer of TiW:N disposed over the layer of antifuse material, said second barrier layer, and an upper electrode over the second barrier layer, the upper electrode comprising a second metal layer in the integrated circuit.

Abstract: A process for fabricating the metal-to-metal antifuse of the present invention includes the steps of forming a first metal layer on a semiconductor or other microcircuit structure; forming a first barrier layer over the first metal layer; forming a thick insulating layer over the barrier layer; forming an antifuse aperture in the thick insulating layer; forming a first heavily doped amorphous silicon layer in the aperture over the first barrier layer; forming a dielectric antifuse material layer over the first amorphous silicon layer; forming a second heavily doped amorphous silicon layer over the first dielectric antifuse material layer; forming a second barrier layer over the second amorphous silicon layer; and forming a second metal layer over the second barrier layer.

Abstract: An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first dielectric layer disposed over the lower first electrode, a layer of amorphous silicon disposed above the first dielectric layer, a second dielectric layer disposed above the amorphous silicon layer, and an upper second electrode disposed above the second dielectric layer.

Abstract: An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.

Abstract: A metal-to metal antifuse device is provided in a double layer metal interconnect structure. A lower electrode comprises a first multilayer metal layer interconnect disposed on an insulator. An inter-metal dielectric is disposed on the first metal layer interconnect having an antifuse via. An antifuse material layer is disposed in the antifuse via and having an upper electrode comprising a second multilayer metal layer interconnect.

Abstract: A metal-to-metal antifuse includes a lower electrode formed from a first metal layer in a semiconductor or other microcircuit structure. A barrier layer is disposed over the first metal layer. A first heavily-doped amorphous silicon layer is disposed over the barrier layer. A thin dielectric antifuse material is disposed over the first amorphous silicon layer. This dielectric can be nearly any dielectric such as nitride or oxide or a combination of these materials such as ONO and should have a breakdown voltage suitable for programming inside the integrated circuit. A second heavily-doped amorphous silicon layer is disposed over the dielectric layer. An upper electrode, comprising a second metal layer including an underlying barrier layer, is disposed over the second amorphous silicon layer. The first and second metal layers may comprise metal interconnect layers in the circuit structure.

Abstract: A static-charge protection device for an antifuse includes an additional second-sized aperture smaller in area than the antifuse apertures disposed in the same inter-electrode dielectric layer. Antifuse material is disposed in the second-sized aperture, and the upper electrode extends over the second aperture as well as the first aperture. A preferred process for fabricating the protection device utilizes the step of forming the smaller apertures and forming their antifuse material layers simultaneously with forming the antifuse apertures.A static-charge protection device for an antifuse device includes an additional second-sized aperture larger in area than the first-sized antifuse apertures. Metal plug material is deposited and etched back. A layer of amorphous silicon antifuse material is formed and defined over the first and second sized apertures, the portion formed over the larger partially filled antifuse protection device cell being thinner.

Abstract: A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.

Abstract: An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first dielectric layer disposed over the lower first electrode, a layer of amorphous silicon disposed above the first dielectric layer, a second dielectric layer disposed above the amorphous silicon layer, and an upper second electrode disposed above the second dielectric layer.

Abstract: An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.

Abstract: Disclosed is a method of and apparatus for determining the optical constants of materials in general and also for determining thicknesses of thin films. A complex index of refraction is derived that provides excellent fits to the measured n and k values of a large number of materials (including semiconductors, dielectrics, and metals) over a wide range of photon energies covering almost the entire range of the spectrum of electromagnetic radiation, including infrared, visible and ultraviolet.