Patents by Inventor Abdul Raffey Faruqi

Abdul Raffey Faruqi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Backscatter reduction in thin electron detectors
    Patent number: 9269531
    Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: February 23, 2016
    Assignee: FEI Company
    Inventors: Michael Alwin William Stekelenburg, Gerrit Cornelis van Hoften, Richard Henderson, Gregory James McMullan, Abdul Raffey Faruqi, Renato Andrea Danilo Turchetta, Nicola Carlo Guerrini, Joeri Lof, Frank Jeroen Pieter Schuurmans
  • Backscatter Reduction in Thin Electron Detectors
    Publication number: 20140166879
    Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.
    Type: Application
    Filed: September 24, 2013
    Publication date: June 19, 2014
    Applicant: FEI Company
    Inventors: Michael Alwin William Stekelenburg, Gerrit Cornelis Van Hoften, Richard Henderson, Gregory James McMullan, Abdul Raffey Faruqi, Renato Andrea Danilo Turchetta, Nicola Carlo Guerrini, Joeri Lof, Frank Jeroen Pieter Schuurmans
  • Backscatter reduction in thin electron detectors
    Patent number: 8618498
    Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: December 31, 2013
    Assignee: FEI Company
    Inventors: Gerrit Cornelis Van Hoften, Michael Alwin William Stekelenburg, Richard Henderson, Gregory James McMullan, Abdul Raffey Faruqi, Renato Andrea Danilo Turchetta, Nicola Carlo Guerrini, Joeri Lof, Frank Jeroen Pieter Schuurmans
  • Backscatter Reduction in Thin Electron Detectors
    Publication number: 20120032078
    Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.
    Type: Application
    Filed: August 3, 2011
    Publication date: February 9, 2012
    Applicant: FEI COMPANY
    Inventors: Michael Alwin William Stekelenburg, Gerrit Cornelis Van Hoften, Richard Henderson, Renato Andrea Danilo Turchetta, Nicola Carlo Guerrini, Joeri Lof, Frank Jeroen Pieter Schuurmans, Abdul Raffey Faruqi, Gregory James McMullan