Abstract: A synthesis method of cathode material for lithium battery is provided. The method includes dissolving lithium, nickel and cobalt acetate in a solution, adding ammonium dihydrogen phosphate to the solution, adding acid to the solution, heating the solution to a first temperature for a first period of time to form a solid mixer material, and sintering the solid mixer material at a second temperature for a second period of time.

Abstract: A colour conversion resonator system, comprising: a first partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a second partially reflective region configured to at least partially transmit light of the first and second primary peak wavelengths and to reflect light of a third primary peak wavelength; a third partially reflective region configured to at least partially reflect light with the third primary peak wavelength; a first colour conversion resonator cavity arranged to receive input light with the first primary peak wavelength through the first partially reflective region and to convert at least some of the light of the first primary peak wavelength to provide light of the second primary peak wavelength, wherein the first colour conversion resonator cavity is arranged such that the second primary peak wavelength resonates in the first colour conversion resonator cavity and resonant light with the second prim

Abstract: A colour conversion resonator system, comprising: a partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a further partially reflective region configured to at least partially reflect light with the second primary peak wavelength; and a colour conversion resonator cavity comprising at least one quantum well, wherein the colour conversion resonator cavity is arranged to: receive input light with the first primary peak wavelength through the partially reflective region; and convert, by the at least one quantum well, at least some of the received input light to provide light of the second primary peak wavelength such that light of the second primary peak wavelength resonates in the cavity and light with the resonant second primary peak wavelength is output through the further partially reflective region, wherein the at least one quantum well is placed to coincide with an antinode of the colour conversion resonator ca

Abstract: According to the first aspect of the disclosure, a method of forming a light emitting device array precursor is provided. The method comprises forming a first light emitting layer on a first substrate, forming an array of first light emitting devices from the first light emitting layer, each first light emitting device configured to emit light having a first wavelength. A first bonding layer is formed on the first light emitting layer. A second light emitting layer is formed on a second substrate, the second light emitting layer configured to emit light having a second wavelength different to the first wavelength. A second bonding layer is formed on the second light emitting layer. The second bonding layer is bonded to a handling substrate, followed by removing the second substrate from the second light emitting layer. A third bonding layer is formed on the second light emitting layer on an opposite side of the second light emitting layer to the handling layer.

Abstract: A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 ?m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.

Abstract: A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 ?m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.

Abstract: A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.

Abstract: A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.

Abstract: A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 ?m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.