Abstract: In one embodiment, a tuning network includes: a controllable capacitance; a first switch coupled between the controllable capacitance and a reference voltage node; a second switch coupled between the controllable capacitance and a third switch; the third switch coupled between the second switch and a second voltage node; a fourth switch coupled between the second voltage node and a first inductor; the first inductor having a first terminal coupled to the fourth switch and a second terminal coupled to at least the second switch; and a second inductor having a first terminal coupled to the second terminal of the first inductor and a second terminal coupled to the controllable capacitance.

Abstract: In one embodiment, a tuning network includes: a controllable capacitance; a first switch coupled between the controllable capacitance and a reference voltage node; a second switch coupled between the controllable capacitance and a third switch; the third switch coupled between the second switch and a second voltage node; a fourth switch coupled between the second voltage node and a first inductor; the first inductor having a first terminal coupled to the fourth switch and a second terminal coupled to at least the second switch; and a second inductor having a first terminal coupled to the second terminal of the first inductor and a second terminal coupled to the controllable capacitance.

Abstract: In one embodiment, a tuning network includes: a controllable capacitance; a first switch coupled between the controllable capacitance and a reference voltage node; a second switch coupled between the controllable capacitance and a third switch; the third switch coupled between the second switch and a second voltage node; a fourth switch coupled between the second voltage node and a first inductor; the first inductor having a first terminal coupled to the fourth switch and a second terminal coupled to at least the second switch; and a second inductor having a first terminal coupled to the second terminal of the first inductor and a second terminal coupled to the controllable capacitance.

Abstract: An apparatus includes a first integrated circuit (IC) that includes a first radio-frequency (RF) circuit to process RF signals, a first antenna port to couple to one or more antennas, and a first switch integrated in the first IC and coupled to the first antenna port. The apparatus further includes a second IC that includes a second RF circuit to process RF signals, a second antenna port to couple to the one or more antennas, and a second switch integrated in the second IC and coupled to the second antenna port.

Abstract: In one example, a semiconductor die includes multi-standard, multi-channel expandable television/satellite receiver that can be flexibly implemented in a number of different configurations to enable incorporation into a plurality of different systems. The semiconductor die may include multiple tuners to receive and tune a terrestrial radio frequency (RF) signal and a satellite RF signal. These tuners may include different frequency synthesizers including voltage controlled oscillators (VCOs) to generate VCO signals at different frequencies, mixers to downconvert the RF signals to baseband signals using the VCO signals. In an implementation, the semiconductor die may further include shared circuitry coupled to the tuners to digitize, process and demodulate the baseband signals.

Abstract: In one example, a semiconductor die includes multi-standard, multi-channel expandable television/satellite receiver that can be flexibly implemented in a number of different configurations to enable incorporation into a plurality of different systems. The semiconductor die may include multiple tuners to receive and tune a terrestrial radio frequency (RF) signal and a satellite RF signal. These tuners may include different frequency synthesizers including voltage controlled oscillators (VCOs) to generate VCO signals at different frequencies, mixers to downconvert the RF signals to baseband signals using the VCO signals. In an implementation, the semiconductor die may further include shared circuitry coupled to the tuners to digitize, process and demodulate the baseband signals.

Abstract: An apparatus includes a first integrated circuit (IC) that includes a first radio-frequency (RF) circuit to process RF signals, a first antenna port to couple to one or more antennas, and a first switch integrated in the first IC and coupled to the first antenna port. The apparatus further includes a second IC that includes a second RF circuit to process RF signals, a second antenna port to couple to the one or more antennas, and a second switch integrated in the second IC and coupled to the second antenna port.

Abstract: An apparatus includes an integrated circuit (IC), which includes a radio-frequency (RF) circuit to process RF signals, and a balun that has first and second ports. First and second switches are coupled to the second port of the balun. The first port of the balun is coupled to the RF circuit.