Abstract: A package is disclosed. The package includes a carrier that comprises a first conductive layer on a first side and a second conductive layer on a second side opposite the first side. The first conductive layer comprises wire bonding pads. The package also includes a semiconductor die that is flip chip mounted on the first side of the carrier.

Abstract: High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of terminals including an antenna terminal, a receive terminal, and a transmit terminal. The RF switch also includes a plurality of transistors that are controllable to set the RF switch in a first mode or a second mode, and an inductor electrically connected between the antenna terminal and the receive terminal.

Abstract: High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of terminals including an antenna terminal, a receive terminal, and a transmit terminal. The RF switch also includes a plurality of transistors that are controllable to set the RF switch in a first mode or a second mode, and an inductor electrically connected between the antenna terminal and the receive terminal.

Abstract: High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.

Abstract: High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.

Abstract: A package is disclosed. The package includes a carrier that comprises a first conductive layer on a first side and a second conductive layer on a second side opposite the first side. The first conductive layer comprises wire bonding pads. The package also includes a semiconductor die that is flip chip mounted on the first side of the carrier.

Abstract: Disclosed herein are power detectors and methods for detecting the average power level of an RF input signal and the voltage envelope of the RF input signal. Also disclosed herein are linear envelope detectors and methods for detecting the voltage envelope of an RF input signal.

Abstract: Disclosed herein are power detectors and methods for detecting the average power level of an RF input signal and the voltage envelope of the RF input signal. Also disclosed herein are linear envelope detectors and methods for detecting the voltage envelope of an RF input signal.

Abstract: Disclosed herein are power detectors and methods for detecting the average power level of an RF input signal and the voltage envelope of the RF input signal. Also disclosed herein are linear envelope detectors and methods for detecting the voltage envelope of an RF input signal.

Abstract: An active bias control circuit for an amplifier includes a switch responsive to a supply voltage for providing an input current to the input of the amplifier, and a current sense circuit coupled to the switch for sensing a scaled down replica of the input current to the amplifier. A first amplifier control circuit is responsive to the current sense circuit for adjusting a first control voltage to the amplifier in response to the sensed, scaled down replica of the input current to regulate the input current to the amplifier. Circuitry for power up sequencing an amplifier for an active bias control circuit for the amplifier is also disclosed.

Abstract: Disclosed herein are power detectors and methods for detecting the average power level of an RF input signal and the voltage envelope of the RF input signal. Also disclosed herein are linear envelope detectors and methods for detecting the voltage envelope of an RF input signal.

Abstract: An active bias control circuit for an amplifier includes a switch responsive to a supply voltage for providing an input current to the input of the amplifier, and a current sense circuit coupled to the switch for sensing a scaled down replica of the input current to the amplifier. A first amplifier control circuit is responsive to the current sense circuit for adjusting a first control voltage to the amplifier in response to the sensed, scaled down replica of the input current to regulate the input current to the amplifier. Circuitry for power up sequencing an amplifier for an active bias control circuit for the amplifier is also disclosed.