Patents by Inventor Abdullah Haaziq AHMAD MAKINUDIN

Abdullah Haaziq AHMAD MAKINUDIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR GROWING A SEMI-POLAR GALLIUM NITRIDE EPITAXIAL LAYER USING ALUMINUM NITRIDE / GALLIUM NITRIDE SUPERLATTICES
    Publication number: 20220090294
    Abstract: A method for growing a semi-polar gallium nitride epitaxial layer by inserting aluminum nitride and gallium nitride multi-layers includes the steps of cleaning m-sapphire substrates and activating the m-sapphire substrates by utilizing a combination of precursors and carrier gas. The method of growing a layer of semi-polar gallium nitride epitaxial layer on m-sapphire substrates further includes nitridating for initiating growth sequence and depositing a nucleation layer. The film stack of aluminum nitride and gallium nitride multi-layers is grown to initiate growth of a super lattice layer on m-plane sapphire substrates. Subsequently, a layer of the undoped gallium nitride is deposited on the m-plane sapphire substrate.
    Type: Application
    Filed: January 17, 2019
    Publication date: March 24, 2022
    Inventors: Ahmad Shuhaimi BIN ABU BAKAR, Omar Ayad Fadhil AL- ZUHAIRI, Abdullah Haaziq AHMAD MAKINUDIN, Mohd Adreen Shah BIN AZMAN SHAH, Anas BIN KAMARUNDZAMAN