Patents by Inventor Abdullah Ibrahim Alhassan

Abdullah Ibrahim Alhassan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METAL ORGANIC CHEMICAL VAPOR DEPOSTION (MOCVD) TUNNEL JUNCTION GROWTH IN III-NITRIDE DEVICES
    Publication number: 20220029049
    Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.
    Type: Application
    Filed: October 7, 2021
    Publication date: January 27, 2022
    Applicants: The Regents of the University of California, King Abdulaziz City For Science And Technology (KACST)
    Inventors: Abdullah Ibrahim Alhassan, Ahmed Alyamani, Abdulrahman Albadri, James S. Speck, Steven P. DenBaars
  • Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices
    Patent number: 11158760
    Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: October 26, 2021
    Assignees: The Regents of the University of California, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST)
    Inventors: Abdullah Ibrahim Alhassan, James S. Speck, Steven P. DenBaars, Ahmed Alyamani, Abdulrahman Albadri
  • METAL ORGANIC CHEMICAL VAPOR DEPOSTION (MOCVD) TUNNEL JUNCTION GROWTH IN III-NITRIDE DEVICES
    Publication number: 20190245112
    Abstract: A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.
    Type: Application
    Filed: February 7, 2019
    Publication date: August 8, 2019
    Inventors: Abdullah Ibrahim Alhassan, James S. Speck, Steven P. DenBaars