Abstract: Various apparatus and methods of testing a semiconductor chip for soft defects are disclosed. In one aspect, a method of testing a semiconductor chip that has a surface and plural circuit structures positioned beneath the surface is provided. An irradiation mask directs light or heat to a series of fractional portions of the surface to perturb portions of the plural circuit structures. The irradiation mask is adjustable such that at least one of the exposed series of fractional portions is smaller than another of the series of fractional portions. The semiconductor chip undergoes a test pattern during the irradiation to each of the fractional portions to determine if a soft defect exists in any of the series of fractional portions. Multiple paths can be tested simultaneously to inform subsequent individual CTP path tests.

Abstract: Various apparatus and methods of testing a semiconductor chip for soft defects are disclosed. In one aspect, a method of testing a semiconductor chip that has a surface and plural circuit structures positioned beneath the surface is provided. An irradiation mask directs light or heat to a series of fractional portions of the surface to perturb portions of the plural circuit structures. The irradiation mask is adjustable such that at least one of the exposed series of fractional portions is smaller than another of the series of fractional portions. The semiconductor chip undergoes a test pattern during the irradiation to each of the fractional portions to determine if a soft defect exists in any of the series of fractional portions. Multiple paths can be tested simultaneously to inform subsequent individual CTP path tests.

Abstract: Various methods and apparatus for electrically probe testing a semiconductor chip with circuit perturbation are disclosed. In one aspect, a method of testing is provided that includes contacting a first nano probe to a conductor structure on a first side of a semiconductor chip. The semiconductor chip has plural circuit structures. A external stimulus is applied to a selected portion of the first side of the semiconductor chip to perturb at least one of the plural circuit structures. The semiconductor chip is caused to perform a test pattern during the application of the external stimulus. An electrical characteristic of the semiconductor chip is sensed with the first nano probe during performance of the test pattern.

Abstract: Various methods and apparatus for electrically probe testing a semiconductor chip with circuit perturbation are disclosed. In one aspect, a method of testing is provided that includes contacting a first nano probe to a conductor structure on a first side of a semiconductor chip. The semiconductor chip has plural circuit structures. A external stimulus is applied to a selected portion of the first side of the semiconductor chip to perturb at least one of the plural circuit structures. The semiconductor chip is caused to perform a test pattern during the application of the external stimulus. An electrical characteristic of the semiconductor chip is sensed with the first nano probe during performance of the test pattern.

Abstract: A wafer shielding chamber assembly for a semiconductor wafer probe station that minimizes the volume of space about the semiconductor wafer so as to minimize air currents about the wafer. The chamber is formed by positioning an annular spacer ring onto the annular periphery of the wafer chuck. A lid is positioned to free-float underneath the support ring of the probe station. The free-floating of the lid permits the upper surface of the spacer ring to engage the lower surface of the lid as the wafer chuck is moved in the z direction and, upon further z movement, moves the lid into the z direction, while still permitting x & y movement between the two. A center hole is formed through the lid. The center hole provides access for the micropositioners contact probes to the wafer. A cylindrical cap assembly is positioned on top of the lid concentric with the center hole.