Patents by Inventor Abdulrahman M. Albadri

Abdulrahman M. Albadri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145769
    Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: October 12, 2021
    Assignees: International Business Machines Corporation, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
    Inventors: Abdulrahman M. Albadri, Bahman Hekmatshoartabari, Devendra K. Sadana, Katherine L. Saenger
  • Patent number: 10615297
    Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: April 7, 2020
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
    Inventors: Abdulrahman M. Albadri, Bahman Hekmatshoartabari, Devendra K. Sadana, Katherine L. Saenger
  • Publication number: 20200058811
    Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.
    Type: Application
    Filed: October 23, 2019
    Publication date: February 20, 2020
    Inventors: ABDULRAHMAN M. ALBADRI, BAHMAN HEKMATSHOARTABARI, DEVENDRA K. SADANA, KATHERINE L. SAENGER
  • Publication number: 20140242746
    Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 28, 2014
    Applicants: King Abdulaziz City for Science and Technology, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Abdulrahman M. Albadri, Bahman Hekmatshoartabari, Devendra K. Sadana, Katherine L. Saenger