Abstract: Aspects of the disclosure provide an integrated circuit (IC) formed on a die. The IC includes first one or more electronic circuits and a seal ring structure. The first one or more electronic circuits are disposed on a first semiconductor substrate. The first semiconductor substrate is diced from a semiconductor wafer. The seal ring structure is configured to surround the first one or more electronic circuits. The seal ring structure is formed by patterning one or more layers of metal compounds on the semiconductor wafer using two or more circuit formation process steps. The seal ring structure includes a remaining portion of a complete seal ring structure after a dicing process step that cuts the complete seal ring structure. The complete seal ring structure has been formed on the semiconductor wafer to surround the first one or more electronic circuits and at least second one or more electronic circuits on a second semiconductor substrate that is diced from the semiconductor wafer.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) formed on a die. The IC includes first one or more electronic circuits and a seal ring structure. The first one or more electronic circuits are disposed on a first semiconductor substrate. The first semiconductor substrate is diced from a semiconductor wafer. The seal ring structure is configured to surround the first one or more electronic circuits. The seal ring structure is formed by patterning one or more layers of metal compounds on the semiconductor wafer using two or more circuit formation process steps. The seal ring structure includes a remaining portion of a complete seal ring structure after a dicing process step that cuts the complete seal ring structure. The complete seal ring structure has been formed on the semiconductor wafer to surround the first one or more electronic circuits and at least second one or more electronic circuits on a second semiconductor substrate that is diced from the semiconductor wafer.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) formed on a die. The IC includes first one or more electronic circuits and a seal ring structure. The first one or more electronic circuits are disposed on a first semiconductor substrate. The first semiconductor substrate is diced from a semiconductor wafer. The seal ring structure is configured to surround the first one or, more electronic circuits. The seal ring structure is formed by patterning one or more layers of metal compounds on the semiconductor wafer using two or more circuit formation process steps. The seal ring structure includes a remaining portion of a complete seal ring structure after a dicing process step that cuts the complete seal ring structure. The complete seal ring structure has been formed on the semiconductor wafer to surround the first one or more electronic circuits and at least second one or more electronic circuits on a second semiconductor substrate that is diced from the semiconductor wafer.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) formed on a die. The IC includes first one or more electronic circuits and a seal ring structure. The first one or more electronic circuits are disposed on a first semiconductor substrate. The first semiconductor substrate is diced from a semiconductor wafer. The seal ring structure is configured to surround the first one or, more electronic circuits. The seal ring structure is formed by patterning one or more layers of metal compounds on the semiconductor wafer using two or more circuit formation process steps. The seal ring structure includes a remaining portion of a complete seal ring structure after a dicing process step that cuts the complete seal ring structure. The complete seal ring structure has been formed on the semiconductor wafer to surround the first one or more electronic circuits and at least second one or more electronic circuits on a second semiconductor substrate that is diced from the semiconductor wafer.