Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid having water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas having a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid including water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas including a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A technique for cleaning a hard disk using a novel support device 502. The technique includes immersing a disk in a liquid comprising water. The disk has a front face, a back face, an edge, and a center region. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the disk.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: Apparatus for cleaning and drying a semiconductor wafer. The apparatus includes a vessel adapted to immerse a partially completed semiconductor wafer in a liquid comprising water. The apparatus also includes a control valve operably coupled to the vessel through a drain, and adapted to allow a gaseous mixture to displace the liquid in the vessel, where the liquid is displaced adjacent to the front face of the partially completed wafer. A controller is included. The controller is operably coupled to a plurality of nozzles. The controller can be used to pulse a drying fluid from the plurality of nozzles to the partially completed wafer to remove a possibility of liquid which may be attached to the partially completed wafer.

Abstract: A method operates a system for wet processing of semiconductors. The system includes an inlet coupled to a fluid source, and a filter coupled to the inlet. The system also includes a sealed vessel coupled to the filter where the sealed vessel has a lower liquid portion and an upper vapor portion. The system further includes an outlet coupled to the sealed vessel. The outlet is attached to the lower liquid portion. A solvent injector coupled to the sealed vessel is also used. The solvent injector is coupled to the upper vapor portion, and supplies a gaseous mixture including a polar organic compound. The polar organic compound is a non-saturated polar organic vapor. The system also includes a gas source coupled to the sealed vessel. The gas source is coupled to the upper vapor portion, and supplies an inert gas into the upper vapor portion. A device for removing the liquid from the lower liquid portion at substantially a constant liquid level rate is also included.

Abstract: A method for drying articles with flat surfaces such as a semiconductor wafer. The method includes steps of immersing a semiconductor wafer in a liquid such as water, and displacing the liquid with a gaseous mixture. The liquid is displaced adjacent to a face of the wafer as measured from the face. A step of pulsing drying fluid directed at wafer edges is also included. The method dries wafers without the use of any harmful organic solvents and the like, and also dries wafers without substantial movement.