Patents by Inventor Abhijeet PATRA

Abhijeet PATRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film deposited inorganic metal oxide as a selective substrate for mammalian cell culture and as an implant coating
    Patent number: 11795430
    Abstract: Disclosed herein is a material that may be useful as a coating for optical slides and medical implants. The material may aid or restrict grown of cells on a coating of the composite material. As such, there is provided a composite material having a substrate on the surface of which a coating layer of an amorphous metal oxide is formed. The metal oxide may be one or more of Ag2O, ZnO, ZrO2, TiO2, CuO, and Y2O3 and the coating layer may be from 5 to 100 nm thick and have a root mean square roughness of the coating surface is from 0.1 to 0.7 nm.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: October 24, 2023
    Assignees: National University of Singapore, Agency for Science, Technology, and Research
    Inventors: Michal Marcin Dykas, Kingshuk Poddar, Xuefeng Hu, Ee Jen Wilson Wang, Thirumalai Venky Venkatesan, Abhijeet Patra, Viknish Krishnan Kutty, Paul Lorenz Bigliardi, Mei Bigliardi
  • Resistive memory devices based on metal coordinated redox active ligands
    Patent number: 10984859
    Abstract: Disclosed herein is a compound of formula (I): [M(L)n]m+(Ay?)z??(I) where A, M, L, n, m, y and z are as defined herein, which can be used in the formation of a resistive memory device. Also disclosed herein are methods of manufacturing such devices and their uses.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: April 20, 2021
    Assignee: Azometrix
    Inventors: Venkatesan Thirumalai, Sreetosh Goswami, Abhijeet Patra, Sreebrata Goswami
  • RESISTIVE MEMORY DEVICES BASED ON METAL COORDINATED REDOX ACTIVE LIGANDS
    Publication number: 20200312407
    Abstract: Disclosed herein is a compound of formula (I): [M(L)n]m+(Ay?)z??(I) where A, M, L, n, m, y and z are as defined herein, which can be used in the formation of a resistive memory device. Also disclosed herein are methods of manufacturing such devices and their uses.
    Type: Application
    Filed: October 1, 2018
    Publication date: October 1, 2020
    Inventors: VENKATESAN THIRUMALAI, SREETOSH GOSWAMI, ABHIJEET PATRA, SREEBRATA GOSWAMI
  • THIN FILM DEPOSITED INORGANIC METAL OXIDE AS A SELECTIVE SUBSTRATE FOR MAMMALIAN CELL CULTURE AND AS AN IMPLANT COATING
    Publication number: 20190345438
    Abstract: Disclosed herein is a material that may be useful as a coating for optical slides and medical implants. The material may aid or restrict grown of cells on a coating of the composite material. As such, there is provided a composite material having a substrate on the surface of which a coating layer of an amorphous metal oxide is formed. The metal oxide may be one or more of Ag2O, ZnO, ZrO2, TiO2, CuO, and Y2O3 and the coating layer may be from 5 to 100 nm thick and have a root mean square roughness of the coating surface is from 0.1 to 0.7 nm.
    Type: Application
    Filed: November 10, 2017
    Publication date: November 14, 2019
    Inventors: Michal Marcin DYKAS, Kingshuk PODDAR, Xuefeng HU, Ee Jen Wilson WANG, Thirumalai Venky VENKATESAN, Abhijeet PATRA, Viknish KRISHNAN KUTTY, Paul Lorenz BIGLIARDI, Mei BIGLIARDI