Patents by Inventor Abhijit A. Kangude
Abhijit A. Kangude has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12205845Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.Type: GrantFiled: October 23, 2020Date of Patent: January 21, 2025Assignee: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Tsutomu Tanaka, Adam J. Fischbach, Abhijit A. Kangude, Juan Carlos Rocha-Alvarez
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Patent number: 12198925Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: GrantFiled: December 5, 2022Date of Patent: January 14, 2025Assignee: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Publication number: 20250014914Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.Type: ApplicationFiled: July 16, 2024Publication date: January 9, 2025Applicant: Applied Materials, Inc.Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
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Patent number: 12057325Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.Type: GrantFiled: July 3, 2023Date of Patent: August 6, 2024Assignee: Applied Materials, Inc.Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
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Publication number: 20240043999Abstract: Exemplary semiconductor processing systems may a lid plate. A gas splitter may be seated on the lid plate. The gas splitter may include a top surface and a plurality of side surfaces. The gas splitter may defines a gas inlet, one or more gas outlets, and one or more gas lumens. The one or more gas lumens may extend between and fluidly couple the gas inlet with each of the one or more gas outlets. A primary gas weldment may extend to and fluidly couples to the gas inlet. A gas panel may include a first fluid source and a second fluid source that are each fluidly coupled with the primary gas weldment. One or more secondary gas weldments may extend between and fluidly couple each of the one or more gas outlets with a respective one of the plurality of processing chambers.Type: ApplicationFiled: August 3, 2022Publication date: February 8, 2024Applicant: Applied Materials, Inc.Inventors: Abhijit A. Kangude, Arun Chakravarthy Chakravarthy
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Publication number: 20240047232Abstract: Exemplary semiconductor processing systems may include a lid plate and a gas splitter. The gas splitter may be seated on the lid plate. The gas splitter may include a top surface and a plurality of side surfaces. The gas splitter may define a gas inlet, a gas outlet, a gas lumen that extends between and fluidly couples the gas inlet with the gas outlet, and a first divert lumen that is fluidly coupled with the gas lumen and that directs gases away from a processing chamber through a divert outlet. The semiconductor processing system may include a first divert weldment. The first divert weldment may extend from and fluidly couple to the divert outlet. The first divert weldment may include a first divert weldment outlet and a second divert weldment outlet.Type: ApplicationFiled: August 4, 2022Publication date: February 8, 2024Applicant: Applied Materials, Inc.Inventors: Abhijit A. Kangude, Elizabeth Neville, Arun Chakravarthy Chakravarthy
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Publication number: 20240047185Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a gas feed line having an RPS outlet and a bypass outlet. The systems may include a remote plasma unit supported atop the lid plate. The remote plasma unit may include an inlet and an outlet. The inlet may be coupled with the RPS outlet. The systems may include a center manifold having an RPS inlet coupled with the outlet and a bypass inlet coupled with the bypass outlet. The center manifold may include a plurality of outlet ports. The systems may include a plurality of side manifolds that are fluidly coupled with the outlet ports. Each of the side manifolds may define a gas lumen. The systems may include a plurality of output manifolds seated on the lid plate. Each output manifold may be fluidly coupled with the gas lumen of one of the side manifolds.Type: ApplicationFiled: August 3, 2022Publication date: February 8, 2024Applicant: Applied Materials, Inc.Inventors: Abhijit A. Kangude, Badri N. Ramamurthi, Arun Chakravarthy Chakravarthy, Vinay K. Prabhakar, Dharma Ratnam Srichurnam
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Patent number: 11881416Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds.Type: GrantFiled: December 14, 2020Date of Patent: January 23, 2024Assignee: Applied Materials, Inc.Inventors: Arun Chakravarthy Chakravarthy, Chahal Neema, Abhijit A. Kangude, Elizabeth Neville, Vishal S. Jamakhandi, Kurt R. Langeland, Syed A. Alam, Ming Xu, Kenneth Le
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Publication number: 20230343608Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.Type: ApplicationFiled: July 3, 2023Publication date: October 26, 2023Applicant: Applied Materials, Inc.Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
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Patent number: 11694908Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.Type: GrantFiled: October 22, 2020Date of Patent: July 4, 2023Assignee: Applied Materials, Inc.Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
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Publication number: 20230094180Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Applicant: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 11594409Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: GrantFiled: June 16, 2020Date of Patent: February 28, 2023Assignee: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Publication number: 20220189793Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds.Type: ApplicationFiled: December 14, 2020Publication date: June 16, 2022Applicant: Applied Materials, Inc.Inventors: Arun Chakravarthy Chakravarthy, Chahal Neema, Abhijit A. Kangude, Elizabeth Neville, Vishal S. Jamakhandi, Kurt R. Langeland, Syed A. Alam, Ming Xu, Kenneth Le
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Publication number: 20220130713Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.Type: ApplicationFiled: October 23, 2020Publication date: April 28, 2022Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Tsutomu Tanaka, Adam J. Fischbach, Abhijit A. Kangude, Juan Carlos Rocha-Alvarez
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Publication number: 20220130687Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.Type: ApplicationFiled: October 22, 2020Publication date: April 28, 2022Applicant: Applied Materials, Inc.Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
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Publication number: 20210272800Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: ApplicationFiled: June 16, 2020Publication date: September 2, 2021Applicant: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 10300557Abstract: A hybrid laser modulation and acid etch process for the creation of a patterned substrate. According to some embodiments, a hole is formed in a glass substrate by first modulating a portion of the substrate in the desired shape. A mask is coated on the glass substrate and is patterned to expose the modulated portion. The glass substrate is then acid etched to remove the modulated portion. Once the modulated portion has been etched, the desired shape may be removed from the glass substrate and the mask may be stripped.Type: GrantFiled: September 22, 2017Date of Patent: May 28, 2019Assignee: Apple Inc.Inventors: Nathan K. Gupta, Simon R. Lancaster-Larocque, Prithu Sharma, Weibo Cheng, Abhijit A. Kangude, Bryan W. Posner, Sudirukkuge T. Jinasundera, Karan Bir
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Publication number: 20180085857Abstract: A hybrid laser modulation and acid etch process for the creation of a patterned substrate. According to some embodiments, a hole is formed in a glass substrate by first modulating a portion of the substrate in the desired shape. A mask is coated on the glass substrate and is patterned to expose the modulated portion. The glass substrate is then acid etched to remove the modulated portion. Once the modulated portion has been etched, the desired shape may be removed from the glass substrate and the mask may be stripped.Type: ApplicationFiled: September 22, 2017Publication date: March 29, 2018Applicant: Apple Inc.Inventors: Nathan K. Gupta, Simon R. Lancaster-Larocque, Prithu Sharma, Weibo Cheng, Abhijit A. Kangude, Bryan W. Posner, Sudirukkuge T. Jinasundera, Karan Bir