Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds.

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

Abstract: Embodiments described herein provide a backside gas delivery assembly that prevents inert gas from forming parasitic plasma. The backside gas delivery assembly includes a first gas channel disposed in a stem of a substrate support assembly. The substrate support assembly includes a substrate support having a second gas channel extending from the first gas channel. The backside gas delivery assembly further includes a porous plug disposed within the first gas channel positioned at an interface of the stem and the substrate support, a gas source connected to the first gas channel configured to deliver an inert gas to a backside surface of a substrate disposed on an upper surface of the substrate support, and a gas tube in the first gas channel extending to the porous plug positioned at the interface of the stem and the substrate support.

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing apparatus. More specifically, embodiments of the disclosure relate to an ICP process chamber. The ICP process chamber includes a chamber body and a lid disposed over the chamber body. The lid is fabricated from a ceramic material. The lid has a monolithic body, and one or more heating elements and one or more coils are embedded in the monolithic body of the lid. The number of components disposed over the lid is reduced with the one or more heating elements and one or more coils embedded in the lid. Furthermore, with the embedded one or more heating elements, the controlling of the thermal characteristics of the lid is improved.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

Abstract: Embodiments described herein provide a backside gas delivery assembly that prevents inert gas from forming parasitic plasma. The backside gas delivery assembly includes a first gas channel disposed in a stem of a substrate support assembly. The substrate support assembly includes a substrate support having a second gas channel extending from the first gas channel. The backside gas delivery assembly further includes a porous plug disposed within the first gas channel positioned at an interface of the stem and the substrate support, a gas source connected to the first gas channel configured to deliver an inert gas to a backside surface of a substrate disposed on an upper surface of the substrate support, and a gas tube in the first gas channel extending to the porous plug positioned at the interface of the stem and the substrate support.

Abstract: Embodiments of the present disclosure generally relate to a semiconductor processing apparatus. More specifically, embodiments of the disclosure relate to generating and controlling plasma. A process chamber includes a chamber body that includes one or more chamber walls and defines a processing region. The process chamber also includes two or more inductively driven radio frequency (RF) coils in a concentric axial alignment, the RF coils arranged near the chamber walls to strike and sustain a plasma inside the chamber body, where at least two of the two or more RF coils are in a recursive configuration.

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Abstract: A hybrid laser modulation and acid etch process for the creation of a patterned substrate. According to some embodiments, a hole is formed in a glass substrate by first modulating a portion of the substrate in the desired shape. A mask is coated on the glass substrate and is patterned to expose the modulated portion. The glass substrate is then acid etched to remove the modulated portion. Once the modulated portion has been etched, the desired shape may be removed from the glass substrate and the mask may be stripped.

Abstract: A hybrid laser modulation and acid etch process for the creation of a patterned substrate. According to some embodiments, a hole is formed in a glass substrate by first modulating a portion of the substrate in the desired shape. A mask is coated on the glass substrate and is patterned to expose the modulated portion. The glass substrate is then acid etched to remove the modulated portion. Once the modulated portion has been etched, the desired shape may be removed from the glass substrate and the mask may be stripped.

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract: Embodiments described herein generally relate to preventing contaminant deposition within a semiconductor processing chamber and removing contaminants from a semiconductor processing chamber. Bottom purging and pumping prevents contaminant deposition below a pedestal heater or exhausts contaminants from below the pedestal, respectively. Bottom purging prevents contaminants from depositing below the pedestal and provides for an exhaust from the processing chamber to be located substantially coplanar with a substrate being processed. Bottom pumping removes contaminants present below the pedestal from the processing chamber. Specifically, embodiments described herein relate to purging and pumping via a pedestal bellows and/or equalization port.

Abstract: Embodiments of a semiconductor processing chamber described herein include a substrate support, a source of radiant energy opposite the substrate support, a window between the source of radiant energy and the substrate support, a detector sensitive to the radiant energy positioned to detect the radiant energy transmitted by the window, and a detector sensitive to radiation emitted by the substrate positioned to detect radiation emitted by the substrate. The chamber may also include a showerhead. The substrate support may be between the detectors and the window. A second radiant energy source may be included to project energy through the window to a detector. The second radiant energy source may also be located proximate the first radiant energy source and the detectors.

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.