Patents by Inventor Abhijit Raghunathan

Abhijit Raghunathan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Room temperature drift suppression via soft program after erase
    Patent number: 7944746
    Abstract: Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: May 17, 2011
    Assignee: Spansion LLC
    Inventors: Gwyn Robert Jones, Mark W Randolph, John Darilek, Sean O'Mullan, Jacob Marcantel, Rick Anundson, Adam Shackleton, Xiaojian Chu, Abhijit Raghunathan, Asif Arfi, Gulzar Ahmed Kathawala, Zhizheng Liu, Sung-Chul Lee
  • ROOM TEMPERATURE DRIFT SUPPRESSION VIA SOFT PROGRAM AFTER ERASE
    Publication number: 20090135659
    Abstract: Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles.
    Type: Application
    Filed: November 27, 2007
    Publication date: May 28, 2009
    Applicant: SPANSION LLC
    Inventors: Gwyn Robert Jones, Mark W. Randolph, John Darilek, Sean O'Mullan, Jacob Marcantel, Rick Anundson, Adam Shackleton, Xiaojian Chu, Abhijit Raghunathan, Asif Arfi, Gulzar Ahmed Kathawala, Zhizheng Liu, Sung-Chul Lee