Patents by Inventor Abhilash Mayur
Abhilash Mayur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11859277Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.Type: GrantFiled: May 21, 2021Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Xi Cen, Kai Wu, Seshadri Ganguli, Xinming Zhang, Norman L. Tam, Abhilash Mayur
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Publication number: 20220372617Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.Type: ApplicationFiled: May 21, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Xi Cen, Kai Wu, Seshadri Ganguli, Xinming Zhang, Norman L. Tam, Abhilash Mayur
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Publication number: 20220375753Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.Type: ApplicationFiled: August 5, 2022Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
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Patent number: 11443948Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.Type: GrantFiled: August 9, 2019Date of Patent: September 13, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
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Publication number: 20200051818Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.Type: ApplicationFiled: August 9, 2019Publication date: February 13, 2020Inventors: Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
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Publication number: 20130243971Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.Type: ApplicationFiled: March 14, 2012Publication date: September 19, 2013Applicant: Applied Materials, Inc.Inventors: David Thompson, Pravin K. Narwankar, Swaminathan Srinivasan, Sukti Chatterjee, Abhilash Mayur, Kashif Maqsood
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Patent number: 8242407Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: June 28, 2010Date of Patent: August 14, 2012Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7772134Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: August 24, 2009Date of Patent: August 10, 2010Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7595208Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: August 10, 2007Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Patent number: 7569463Abstract: The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: GrantFiled: July 25, 2006Date of Patent: August 4, 2009Assignee: Applied Materials, Inc.Inventors: Ajit Balakrishna, Paul Carey, Dean Jennings, Abhilash Mayur, Stephen Moffatt, William Schaffer, Mark Yam
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Publication number: 20080041831Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.Type: ApplicationFiled: October 25, 2007Publication date: February 21, 2008Applicant: Applied Materials, Inc.Inventors: Dean Jennings, Mark Yam, Abhilash Mayur, Vernon Behrens, Paul O'Brien, Leonid Tertitski, Alexander Goldin
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Publication number: 20070293058Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: ApplicationFiled: August 10, 2007Publication date: December 20, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Dean JENNINGS, Haifan LIANG, Mark YAM, Vijay PARIHAR, Abhilash MAYUR, Aaron HUNTER, Bruce ADAMS, Joseph RANISH
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Publication number: 20070243721Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.Type: ApplicationFiled: June 14, 2007Publication date: October 18, 2007Inventors: LUC AUTRYVE, Christopher Bencher, Dean Jennings, Haifan Liang, Abhilash Mayur, Mark Yam, Wendy Yeh, Richard Brough
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Patent number: 7279721Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.Type: GrantFiled: April 13, 2005Date of Patent: October 9, 2007Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Haifan Liang, Mark Yam, Vijay Parihar, Abhilash Mayur, Aaron Hunter, Bruce Adams, Joseph Michael Ranish
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Publication number: 20070221640Abstract: The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.Type: ApplicationFiled: July 25, 2006Publication date: September 27, 2007Inventors: Dean Jennings, Alexander N. Lerner, Abhilash Mayur, Stephen Moffatt, Timothy N. Thomas
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Publication number: 20070114214Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.Type: ApplicationFiled: September 15, 2006Publication date: May 24, 2007Applicant: Applied Materials, Inc.Inventors: Dean Jennings, Mark Yam, Abhilash Mayur, Vernon Behrens, Paul O'Brien, Leonid Tertitski, Alexander Goldin
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Publication number: 20070108166Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.Type: ApplicationFiled: November 20, 2006Publication date: May 17, 2007Applicant: Applied Materials, Inc.Inventors: Dean Jennings, Mark Yam, Abhilash Mayur, Vernon Behrens, Paul O'Brien, Leonid Tertitski, Alexander Goldin
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Publication number: 20070032082Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece.Type: ApplicationFiled: August 8, 2005Publication date: February 8, 2007Inventors: Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth Collins, Kai Ma, Vijay Parihar, Dean Jennings, Abhilash Mayur, Amir Al-Bayati, Andrew Nguyen
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Publication number: 20070032095Abstract: A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.Type: ApplicationFiled: August 8, 2005Publication date: February 8, 2007Inventors: Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth Collins, Kai Ma, Vijay Parihar, Dean Jennings, Abhilash Mayur, Amir Al-Bayati, Andrew Nguyen
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Publication number: 20070032054Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.Type: ApplicationFiled: August 8, 2005Publication date: February 8, 2007Inventors: Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth Collins, Kai Ma, Vijay Parihar, Dean Jennings, Abhilash Mayur, Amir Al-Bayati, Andrew Nguyen