Abstract: Embodiments of the present disclosure are directed towards a memory device including a top wordline contact located in a region that is protected from erosion during a planarization process, e.g., chemical mechanical polish (CMP). In embodiments, a plurality of wordlines are formed in a stack of multiple layers and a plurality of wordline contacts are formed to intersect with the plurality of wordlines. In embodiments, the stack forms a staircase and each of the plurality of wordline contacts lands on a corresponding each of the wordlines proximate to an edge of the staircase such that a top wordline contact lands in a region on a top wordline previously covered by a sacrificial layer. In some embodiments, the region is proximate to a raised notch at an edge of the staircase. Other embodiments may be described and claimed.

Abstract: A system and a method for controlling an agricultural vehicle includes receiving sensor information for the agricultural vehicle from one or more sensors, determining a change in a state of the agricultural vehicle based on the sensor information, determining a change in a physical parameter of the agricultural vehicle based on the change in the state of the agricultural vehicle, updating an auto-guidance controller for the agricultural vehicle based on the change in the physical parameter of the agricultural vehicle, and controlling an operation of the agricultural vehicle based on the updated auto-guidance controller.

Abstract: Systems and methods are disclosed for aligning an agricultural vehicle, such as a harvester, with reference crop rows by implementing a nudge in the form of a change in a feedback signal from a sensing arrangement that detects relative distances from the reference crop rows. The nudge may be implemented as a voltage change in a variable voltage feedback signal from the sensing arrangement. The amount of nudge may be determined from an algorithm, a lookup table, or may be made in predetermined steps. The system may implement open loop (manual) or closed loop control of the nudges.

Abstract: A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.

Abstract: Disclosed herein is a stabilised Na-ion oxide P3 phase of formula (I): P3-NaxMyOz Where, x>0.66, 0.8?y?1.0, z?2; and M is selected from one or more of the group consisting of a 3d transition metal, a 4d transition metal, Al, Mg, B, Si, Sn, Sr and Ca. The stabilised Na-ion oxide P3 phase of formula (I) may be particularly useful as an active material in a Na-ion battery.

Abstract: Embodiments of the present disclosure are directed towards a memory device including a top wordline contact located in a region that is protected from erosion during a planarization process, e.g., chemical mechanical polish (CMP). In embodiments, a plurality of wordlines are formed in a stack of multiple layers and a plurality of wordline contacts are formed to intersect with the plurality of wordlines. In embodiments, the stack forms a staircase and each of the plurality of wordline contacts lands on a corresponding each of the wordlines proximate to an edge of the staircase such that a top wordline contact lands in a region on a top wordline previously covered by a sacrificial layer. In some embodiments, the region is proximate to a raised notch at an edge of the staircase. Other embodiments may be described and claimed.

Abstract: A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.

Abstract: Compositions and methods suitable for the electrochemical mechanical planarization of a conductive material layer on a semiconductor workpiece. Compositions contain a phosphonic acid based electrolyte, a corrosion inhibitor, a chelating agent, a pH adjusting agent, and a solvent as the remainder.