Abstract: Embodiments of the disclosure provide for intelligent model integration within a process simulation system. Some embodiments receive data associated with the operation of a plant, determine, using at least one specially configured algorithm and based on the received data, at least one qualifying dataset determined qualified to train an intelligent model, train the intelligent model using the at least one qualifying dataset, and deploy the trained intelligent model for use.

Abstract: Methods of producing low resistivity tungsten bulk layers having low roughness and associated apparatus are provided. According to various embodiments, the methods involve CVD deposition of tungsten at high pressures and/or high temperatures. In some embodiments, the CVD deposition occurs in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen.

Abstract: Methods of producing low resistivity tungsten bulk layers having low roughness and associated apparatus are provided. According to various embodiments, the methods involve CVD deposition of tungsten at high pressures and/or high temperatures. In some embodiments, the CVD deposition occurs in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen.

Abstract: Provided are methods and related apparatus for removing tungsten film from a station of a single-station or multi-station chamber and station component surfaces between tungsten deposition processes. In some embodiments, the methods can involve introducing an inert gas flow upstream of a gas inlet to a station and downstream of a remote plasma generator that provides activated cleaning species. In some embodiments, the methods can involve modulating inert gas flow during various stages of a cleaning process. In some embodiments, the methods can involve manipulating positions of a substrate carrier ring during various stages of the cleaning process. Also in some embodiments, the methods can involve differentially modulating the amounts of inert gas introduced to stations of a multi-station chamber. The methods can provide improved clean uniformity, reduced over-etch, and increased throughput due to shorter cleaning time.

Abstract: Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various embodiments, between 20-90% of the total film thickness is deposited by CVD in the presence of nitrogen.

Abstract: Improved methods of removing tungsten film from the interior reactor and reactor component surfaces between tungsten deposition operations are provided. The methods involve increasing the availability of molecular fluorine to remove tungsten from the reactor while maintaining fast removal rates. Certain embodiments involve a multi-stage process including a stage in which atomic fluorine is introduced at a low pressure (e.g., about 8 Torr or less) and a stage in which molecular fluorine is introduced or allowed to form in the chamber at high pressure (e.g., about 8 Torr or higher).

Abstract: Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various embodiments, between 20-90% of the total film thickness is deposited by CVD in the presence of nitrogen.