Patents by Inventor Abhishek Motayed

Abhishek Motayed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10983102
    Abstract: Systems and methods provide for manufacturing and assembling a single package gas sensor. The method includes: disposing a substrate in a housing; disposing at least one gas sensor die on the substrate; disposing at least one ultraviolet (UV) light emitting diode (LED) on the substrate; and attaching a lid to the housing, wherein the lid includes at least one gas ingress point.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: April 20, 2021
    Assignee: N5 SENSORS, INC.
    Inventors: Abhishek Motayed, Ratan Debnath, Brian Thomson
  • Patent number: 10908138
    Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: February 2, 2021
    Inventors: Abhishek Motayed, Geetha Aluri, Albert V. Davydov, Mulpuri V. Rao, Vladimir P. Oleshko, Ritu Bajpai, Mona E. Zaghloul
  • Patent number: 10168309
    Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: January 1, 2019
    Assignees: UNIVERSITY OF MARYLAND, COLLEGE PARK, THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERICE, GEORGE MASON UNIVERSITY, THE GEORGE WASHINGTON UNIVERSITY
    Inventors: Abhishek Motayed, Geetha Aluri, Albert V. Davydov, Mulpuri V. Rao, Vladimir P. Oleshko, Ritu Bajpai, Mona E. Zaghloul
  • Patent number: 10139382
    Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: November 27, 2018
    Assignees: UNIVERSITY OF MARYLAND, COLLEGE PARK, THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERICE, GEORGE MASON UNIVERSITY, THE GEORGE WASHINGTON UNIVERSITY
    Inventors: Abhishek Motayed, Geetha Aluri, Albert V. Davydov, Mulpuri V. Rao, Vladimir P. Oleshko, Ritu Bajpai, Mona E. Zaghloul
  • Patent number: 9983183
    Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: May 29, 2018
    Assignees: University of Maryland, College Park, The United States of America, as represented by the Secretary of Commerce, George Mason University, The George Washington University
    Inventors: Abhishek Motayed, Geetha Aluri, Albert V. Davydov, Mulpuri V. Rao, Vladimir P. Oleshko, Ritu Bajpai, Mona E. Zaghloul, Brian Thomson, Baomei Wen, Ting Xie, Guannan Liu, Ratan Debnath
  • Patent number: 9627199
    Abstract: Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: April 18, 2017
    Assignees: University of Maryland, College Park, Northrop Grumman Systems Corporation, The United States of America, as represented by the Secretary of Commerce, National Institute of Standards and Technology
    Inventors: Abhishek Motayed, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Jong-Yoon Ha
  • Publication number: 20170038326
    Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.
    Type: Application
    Filed: October 19, 2016
    Publication date: February 9, 2017
    Applicants: University of Maryland, College Park, United States of America, as Represented by the Secretary of Commerce, George Mason University, The George Washington University
    Inventors: Abhishek Motayed, Geetha Aluri, Albert V. Davydov, Mulpuri V. Rao, Vladimir P. Oleshko, Ritu Bajpai, Mona E. Zaghloul
  • Patent number: 9476862
    Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: October 25, 2016
    Assignees: University of Maryland, College Park, The United States of America, as Represented by the Secretary of Commerce, National Institute of Standards and Technology, George Mason University, The George Washington University
    Inventors: Abhishek Motayed, Geetha Aluri, Albert V. Davydov, Mulpuri V. Rao, Vladimir P. Oleshko, Ritu Bajpai, Mona E. Zaghloul
  • Publication number: 20150170901
    Abstract: Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.
    Type: Application
    Filed: December 12, 2014
    Publication date: June 18, 2015
    Applicants: University of Maryland, College Park, Northrop Grumman Systems Corporation, United States of America, as Represented by the Secretary of Commerce
    Inventors: Abhishek Motayed, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Jong-Yoon Ha