Abstract: An Application Specific Integrated Circuit (ASIC) configured to control one or more gas sensors includes a light emitting diode (LED) driver which receives a pulse width modulator (PWM) signal for driving at least one ultraviolet (UV) LED, wherein an output of the at least one UV LED activates the one or more gas sensors; and an amplifier front end and an analog to digital converter (ADC) configured to calibrate an output of an amplifier to remove offsets associated with outputs associated with the one or more gas sensors, wherein calibration of the amplifier occurs after both generation of the PWM signal and entering a steady state by the one or more gas sensors, further wherein the amplifier receives one or more inputs associated with the one or more gas sensors.

Abstract: Systems and methods provide for manufacturing and assembling a single package gas sensor. The method includes: disposing a substrate in a housing; disposing at least one gas sensor die on the substrate; disposing at least one ultraviolet (UV) light emitting diode (LED) on the substrate; and attaching a lid to the housing, wherein the lid includes at least one gas ingress point.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: Systems and methods provide for manufacturing and assembling a single package gas sensor. The method includes: disposing a substrate in a housing; disposing at least one gas sensor die on the substrate; disposing at least one ultraviolet (UV) light emitting diode (LED) on the substrate; and attaching a lid to the housing, wherein the lid includes at least one gas ingress point.

Abstract: A carbon dioxide sensor package includes a housing having an opening. A filter membrane is mounted in the opening of the housing. A sensor is disposed within a cavity in the housing, the cavity being disposed beneath the opening, wherein the sensor is configured with first particles functionalizing an outer surface thereof to adsorb a target analyte in a presence of light, wherein the target analyte is carbon dioxide, and further configured to output data associated with a concentration of carbon dioxide sensed by the sensor. The package also includes an application specific integrated circuit disposed within the housing and configured to process data from the sensor and output processed data associated with the concentration of carbon dioxide. A light source is also disposed within the housing and configured to generate the light.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

Abstract: Methods of fabricating micro- and nanostructures comprise top-down etching of lithographically patterned GaN layer to form an array of micro- or nanopillar structures, followed by selective growth of GaN shells over the pillar structures via selective epitaxy. Also provided are methods of forming micro- and nanodisk structures and microstructures formed from thereby.