Patents by Inventor Abigail Bell

Abigail Bell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method To Synthesize Highly Luminescent Doped Metal Nitride Powders
    Publication number: 20080025902
    Abstract: A simple, inexpensive method of producing in bulk a doped metal nitride powder that exhibits a high luminescent efficiency, by first forming a metal-dopant alloy and then reacting the alloy with high purity ammonia under controlled conditions in a reactor. The resulting doped metal nitride powders will exhibit a luminescent efficiency that greatly exceeds that seen in pure undoped GaN powders, doped GaN thin films, and ZnS powders.
    Type: Application
    Filed: April 27, 2005
    Publication date: January 31, 2008
    Inventors: Fernando A. Ponce, Rafael Garcia, Alan C. Thomas, Abigail Bell
  • Systems and methods for synthesis of gallium nitride powders
    Patent number: 7255844
    Abstract: A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a full reaction, yielding high purity crystalline GaN powders with a stoichiometric nitrogen concentration and a hexagonal wurtzite structure.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: August 14, 2007
    Assignee: Arizona Board of Regents
    Inventors: Fernando A. Ponce, Rafael Garcia, Abigail Bell, Alan C. Thomas, Michael R. Stevens
  • Systems and methods for synthesis of gallium nitride powders
    Publication number: 20050238562
    Abstract: A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a full reaction, yielding high purity crystalline GaN powders with a stoichiometric nitrogen concentration and a hexagonal wurtzite structure.
    Type: Application
    Filed: November 24, 2004
    Publication date: October 27, 2005
    Inventors: Fernando Ponce, Rafael Garcia, Abigail Bell, Alan Thomas, Michael Stevens