Patents by Inventor Abigail Ebbing

Abigail Ebbing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ETHYLENEOXIDE-SILANE AND BRIDGED SILANE PRECURSORS FOR FORMING LOW K FILMS
    Publication number: 20080048148
    Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.
    Type: Application
    Filed: October 28, 2007
    Publication date: February 28, 2008
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Alexander Borovik, Chongying Xu, Thomas Baum, Steven Bilodeau, Jeffrey Roeder, Abigail Ebbing, Daniel Vestyck
  • Ethyleneoxide-silane and bridged silane precursors for forming low k films
    Publication number: 20060134897
    Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.
    Type: Application
    Filed: December 24, 2005
    Publication date: June 22, 2006
    Inventors: Alexander Borovik, Chongying Xu, Thomas Baum, Steven Bilodeau, Jeffrey Roeder, Abigail Ebbing, Daniel Vestyck
  • Ethyleneoxide-silane and bridged silane precursors for forming low k films
    Patent number: 7022864
    Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.
    Type: Grant
    Filed: July 15, 2003
    Date of Patent: April 4, 2006
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Alexander S. Borovik, Chongying Xu, Thomas H. Baum, Steven Bilodeau, Jeffrey F. Roeder, Abigail Ebbing, Daniel Vestyck
  • Ethyleneoxide-silane and bridged silane precursors for forming low k films
    Publication number: 20050013936
    Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula ?wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.
    Type: Application
    Filed: July 15, 2003
    Publication date: January 20, 2005
    Inventors: Alexander Borovik, Chongying Xu, Thomas Baum, Steven Bilodeau, Jeffrey Roeder, Abigail Ebbing, Daniel Vestyck