Abstract: A storage module and method are provided for determining ready/busy status of a plurality of memory dies. In one embodiment, a bus has a ready/busy line that is shared among the plurality of memory dies, and a time-division multiplex signal on the shared ready/busy line is used to communicate the ready/busy status of each of the memory dies. In another embodiment, each of the memory dies sends its ready/busy status to the storage controller using a different one of a plurality of data lines in the bus. In yet another embodiment, each of the memory dies sends a pulse across the ready/busy line with a different pulse width. To avoid collisions, each memory die waits a different number of clock cycles before attempting to send its pulse status after determining that the shared ready/busy line is in use.

Abstract: In one embodiment, a storage module comprises a controller and a memory having a plurality of bit lines. The controller detects an uncorrectable error in a code word read from the memory, determines location(s) of grown bad bit line(s) that contributed to the error in the code word being uncorrectable, and uses the determined location(s) of the grown bad bit line(s) to attempt to correct the error in the code word.

Abstract: A storage module and method are provided for improved error correction by detection of grown bad bit lines. In one embodiment, a storage module is provided comprising a controller and a memory having a plurality of bit lines. The controller detects an uncorrectable error in a code word read from the memory, determines location(s) of grown bad bit line(s) that contributed to the error in the code word being uncorrectable, and uses the determined location(s) of the grown bad bit line(s) to attempt to correct the error in the code word.

Abstract: A storage module and method are provided for determining ready/busy status of a plurality of memory dies. In one embodiment, a bus has a ready/busy line that is shared among the plurality of memory dies, and a time-division multiplex signal on the shared ready/busy line is used to communicate the ready/busy status of each of the memory dies. In another embodiment, each of the memory dies sends its ready/busy status to the storage controller using a different one of a plurality of data lines in the bus. In yet another embodiment, each of the memory dies sends a pulse across the ready/busy line with a different pulse width. To avoid collisions, each memory die waits a different number of clock cycles before attempting to send its pulse status after determining that the shared ready/busy line is in use.