Patents by Inventor Abnash C. Sachdeva

Abnash C. Sachdeva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Merged bipolar and complementary metal oxide semiconductor transistor device
    Patent number: 5023690
    Abstract: A method of making a merged bipolar and field effect semiconductor transistors on a semiconductor substrate by forming a diffused buried DUF collector region of a second conductivity type in the substrate, and growing an impurity doped epitaxial layer of silicon of the second conductivity type over the substrate. Once the epitaxial layer is grown, a plurality of isolation regions are formed in this layer. A bipolar transistor is formed over the DUF region in a bipolar isolation region and a field effect transistor formed in the second isolation region. Contacts and interconnects are deposited and patterned.
    Type: Grant
    Filed: February 27, 1990
    Date of Patent: June 11, 1991
    Assignee: Texas Instruments Incorporated
    Inventors: Douglas P. Verret, Michael C. Smayling, Abnash C. Sachdeva, Stephen A. Keller
  • Method of making a merge bipolar and complementary metal oxide semiconductor transistor device
    Patent number: 4797372
    Abstract: A method of making a merged bipolar and field effect semiconductor transistors on a semiconductor substrate by forming a diffused buried DUF collector region of a second conductivity type in the substrate, and growing an impurity doped epitaxial layer of silicon of the second conductivity type over the substrate. Once the epitaxial layer is grown, a plurality of isolation regions are formed in this layer. A bipolar transistor is formed over the DUF region in a bipolar isolation region and a field effect transistor formed in the second isolation region. Contacts and interconnects are deposited and patterned.
    Type: Grant
    Filed: October 24, 1986
    Date of Patent: January 10, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Douglas P. Verret, Michael C. Smayling, Abnash C. Sachdeva, Stephen A. Keller