Abstract: The present invention relates to a light-transmitting substrate (1) which is at least provided with a light-absorbing coating (3). The light-absorbing coating comprises stabilized pigments which are incorporated in a sol-gel matrix. The light absorbing coating comprises silica particles having a size between 5 and 100 nanometers and alumina particles having a size between 5 and 50 nanometers. The total volume concentration of pigments, silica and alumina particles in the light-absorbing coating is between 20 and 65 percent. The volume concentration of silica particles is between 5 and 40 percent and the volume concentration of alumina particles between 1 and 15 percent.

Abstract: Semiconductor devices are fabricated using nanowires 16. A conductive gate 22 may be used to control conduction along the nanowires 16, in which case one of the contacts is a drain 12 and the other a source 18. The nanowires 16 may be grown in a trench or through-hole 8 in a substrate 2 or in particular in epilayer 3 on substrate 2. The gate 22 may be provided only at one end of the nanowires 16. The nanowires 16 can be of the same material along their length; alternatively different materials can be used, especially different materials adjacent to the gate 22 and between the gate 22 and the base of the trench.

Abstract: A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.

Abstract: An electric device is disclosed comprising a pn-heterojunction (4) formed by a nanowire (3) of 111-V semiconductor material and a semiconductor body (1) comprising a group IV semiconductor material. The nanowire (3) is positioned in direct contact with the surface (2) of the semiconductor body (1) and has a first conductivity type, the semiconductor body (1) has a second conductivity type opposite to the first conductivity type, the nanowire (3) forming with the semiconductor body (1) a pn-heterojunction (4). The nanowire of III-V semiconductor material can be used as a diffusion source (5) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region (6) in the semiconductor body in direct contact with the nanowire (3).

Abstract: The electronic device with a layer of mesoporous silica can be obtained by applying a composition comprising alkoxysilane, a surfactant and a solvent onto a substrate, and by subsequently removing the surfactant and the solvent. The customary dehydroxylation treatment is not necessary if the composition contains a mixture of tetra-alkoxysilane, particularly teatraethoxyorthosilicate (TEOS), and an alkyl-substituted alkoxysilane, particularly a phenyl-substituted, methyl-substituted or ethyl-substituted trialkoxysilane. If both silanes are present in a molar ratio of approximately 1:1, a layer with a dielectric constant of 2.5 or less is obtained.

Abstract: Disclosed is a light-transmitting substrate that is at least partly provided with a light-absorbing coating. Said coating comprises silver or gold particles that are incorporated in a sol-gel matrix. In order to improve the transmittance in red and to reduce the amount of silver and gold particles, a blue-absorbing compound is added to the coating. Furthermore, an electric lamp is disclosed, said lamp comprising a light-transmitting lamp vessel that accommodates a light source. Said lamp vessel comprises the above light-transmitting substrate. Moreover, a light-absorbing coating is disclosed.

Abstract: The compound nanotubes of InP or another II-VI or III-V material show a very large blueshift. Thus, devices with photoluminescent and electroluminescent effects in the visible range of the electromagnetic spectrum are provided by the inclusion of such nanotubes.

Abstract: The invention relates to a method of breaking a substrate of a brittle material, the method comprising the steps of providing a substrate (1) of a brittle material, heating the substrate with a laser beam (3) to create a heated spot on the substrate, moving the laser beam and the substrate with respect to each other to create a line of heated spots on the substrate (2), cooling the heated spots on the substrate by locally applying a cooling medium (4) behind the heated spots such that a micro-crack is propagated in the line of heated spots, and breaking the substrate along the line of the propagated micro-cracks by applying a mechanical force on the substrate wherein, the cooling medium comprises an aqueous surfactant solution. The surfactants will connect to the broken siloxane bonds inside the surface cracks. Then recombination and healing of the broken siloxane bonds will not occur and the required breaking load will remain constant over time.