Abstract: A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A controller for a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD) increases flash endurance using a DRAM buffer. Host accesses to flash are intercepted by the controller and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type in the DRAM before storage by lower-level flash devices such as eMMC, UFS, or iSSD. Caches in the DRAM buffer for storing each data type are managed and flushed to the flash devices by the controller. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

Abstract: A pen-type computer peripheral device includes an elongated housing containing a PCBA having a plug connector, and cap/cover that is slidably connected to a front portion of the housing. Locking structures are respectively integrally molded onto opposing surfaces of the housing and cap/cover that cooperate to prevent separation of the cap/cover from the housing. By manually pushing (sliding) the cap/cover relative to the housing, the plug connector is effectively moved between a retracted position, in which the plug connector is disposed inside the cap/cover, and a deployed position in which the plug connector extends through a front housing opening of the cap/cover such that the plug connector is operably exposed for insertion into a host system.

Abstract: An retention flash controller reads assigned-level bits from a bad block/erase count table or from a page status table that indicate when flash memory cells operate as Triple-Level-Cell (TLC), Multi-Level-Cell (MLC), or Single-Level-Cell (SLC). Pages that fail as TLC or MLC are downgraded for use as SLC pages by changing the assigned-level bits. The level bits adjust truth tables used by translation logic that receives inputs from voltage comparators reading a bit line. The range of voltages for each logic level may be adjusted by the truth tables or by programmable registers. The programming voltage or programming pulses may be adjusted to increase endurance and the number of permitted program-erase cycles while reducing retention times before a refresh is needed of the flash cells. Mixed configurations of flash memory have MLC blocks and MLC as SLC blocks, or other combinations.

Abstract: A dual-personality extended USB (EUSB) system supports both USB and EUSB memory cards using an extended 9-pin EUSB socket. Each EUSB device 101 includes a PCBA having four standard USB metal contact pads disposed on an upper side of a PCB, and several extended purpose contact springs that extend through openings defined in the PCB. A single-shot molding process is used to form both an upper housing portion on the upper PCB surface that includes ribs extending between adjacent contact pads, and a lower molded housing portion that is formed over passive components and IC dies disposed on the lower PCB surface. The passive components are mounted using SMT methods, and the IC dies are mounted using COB methods. The extended 9-pin EUSB socket includes standard USB contacts and extended use contacts that communicate with the PCBA through the standard USB metal contacts and the contact springs.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: A swivel-type portable flash device includes a C-shaped swivel cover that rotates (swivels) relative to a housing between an open position in which a plug connector is exposed for insertion in a host system, and a closed position in which the plug connector is covered and protected by the swivel cover. The swivel cover is permanently rotatably connected to the housing by ring-shaped protrusions that are movably engaged inside corresponding recessed ring-shaped grooves formed in upper/lower walls of the housing, whereby the swivel cover is manually rotatable relative to the housing between the opened and closed positions. The swivel cover includes locking structures (e.g., locking notches) disposed on the ring-shaped protrusions, and the housing includes second locking structures disposed in the recessed ring-shaped grooves, where the first and second locking structures prevent rotation of the swivel cover when the plug connector is closed.

Abstract: A flash memory solid-state-drive (SSD) has a smart storage switch that reduces write acceleration that occurs when more data is written to flash memory than is received from the host. Page mapping rather than block mapping reduces write acceleration. Host commands are loaded into a Logical-Block-Address (LBA) range FIFO. Entries are sub-divided and portions invalidated when a new command overlaps an older command in the FIFO. Host data is aligned to page boundaries with pre- and post-fetched data filling in to the boundaries. Repeated data patterns are detected and encoded by compressed meta-data codes that are stored in meta-pattern entries in a meta-pattern cache of a meta-pattern flash block. The sector data is not written to flash. The meta-pattern entries are located using a meta-data mapping table. Storing host CRC's for comparison to incoming host data can detect identical data writes that can be skipped, avoiding a write to flash.

Abstract: A USB plug receptacle includes a connector substrate having a tongue portion having a first set of electrical contact pins disposed on a top surface of the tongue portion, a second set of a plurality of electrical pins disposed on a bottom surface of the tongue portion, a third set of electrical contact pins disposed on an opposite end of the tongue portion. The USB plug receptacle further includes a metal case made of a sheet of electrically conductive metal plate by blanking the sheet into a generally tubular shape to receive and enclose the connector substrate. When the connector substrate is inserted into the metal case, the third set of electrical contact pins are exposed outside of the metal case and the third set of electrical contact pins can be mounted on first and second sets of electrical contact pads of a printed circuit board assembly.

Abstract: A solid-state disk (SSD) has a smart storage switch with a smart storage transaction manager that re-orders host commands for accessing downstream single-chip flash-memory devices. Each single-chip flash-memory device has a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory blocks in the single-chip flash-memory device. Wear-leveling and bad block remapping are preformed by each single-chip flash-memory device, and at a higher level by a virtual storage processor in the smart storage switch. Virtual storage bridges between the smart storage transaction manager and the single-chip flash-memory devices bridge LBA transactions over LBA buses to the single-chip flash-memory devices.

Abstract: A USB plug receptacle includes a connector substrate having a tongue portion having a first set of electrical contact pins disposed on a top surface of the tongue portion, a second set of a plurality of electrical pins disposed on a bottom surface of the tongue portion, a third set of electrical contact pins disposed on an opposite end of the tongue portion. The USB plug receptacle further includes a metal case made of a sheet of electrically conductive metal plate by blanking the sheet into a generally tubular shape to receive and enclose the connector substrate. When the connector substrate is inserted into the metal case, the third set of electrical contact pins are exposed outside of the metal case and the third set of electrical contact pins can be mounted on first and second sets of electrical contact pads of a printed circuit board assembly.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

Abstract: An extended Universal-Serial-Bus (USB) connector plug and socket each have a pin substrate with one surface that supports the four metal contact pins for the standard USB interface. An extension of the pin substrate carries another 8 extension metal contact pins that mate when both the connector plug and socket are extended. The extension can be an increased length of the plug's and socket's pin substrate or a reverse side of the substrate. Standard USB connectors do not make contact with the extension metal contacts that are recessed, retracted by a mechanical switch, or on the extension of the socket's pin substrate that a standard USB connector cannot reach. Standard USB sockets do not make contact with the extension metal contacts because the extended connector's extension contacts are recessed, or on the extension of the connector pin substrate that does not fit inside a standard USB socket.

Abstract: An extended universal serial bus (USB) storage device is described herein. According to one embodiment, an extended USB storage device includes a printed circuit board assembly (PCBA) having a flash memory device and a flash controller mounted thereon, and an extended USB connector plug coupled to the PCBA for providing a USB compatible interface between an external device and the flash memory device and the flash controller, wherein the extended USB connector plug includes a first end used to couple to the external device and a second end coupled to the flash memory device and the flash controller. The extended USB connector plug includes multiple communication interfaces. Other methods and apparatuses are also described.

Abstract: A Multi-Media Card (MMC) Single-Chip Flash Device (SCFD) contains a MMC flash microcontroller and flash mass storage blocks containing flash memory arrays that are block-addressable rather than randomly-addressable. An initial boot loader is read from the first page of flash by a state machine and written to a small RAM. A central processing unit (CPU) in the microcontroller reads instructions from the small RAM, executing the initial boot loader, which reads more pages from flash. These pages are buffered by the small RAM and written to a larger DRAM. Once an extended boot sequence is written to DRAM, the CPU toggles a RAM_BASE bit to cause instruction fetching from DRAM. Then the extended boot sequence is executed from DRAM, copying an OS image from flash to DRAM. Boot code and control code are selectively overwritten during a code updating operation to eliminate stocking issues.

Abstract: Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.

Abstract: An extended USB plug connector includes a connector substrate including a frontend having a first set of electrical contact pins disposed thereon and a backend having a second set of electrical contact pins disposed thereon. The first set includes a first row of electrical contact pins disposed on a top surface of the connector substrate and a second row of electrical contact pins disposed in parallel with the first row of electrical contact pins and interior to the first row of electrical contact pins, where the second row includes more electrical contact pins than the first row. The second set of electrical contact pins includes a number of electrical contact pins equal to the first row and second row of electrical contact pins in total. The second set of electrical contact pins are used to connect to corresponding electrical contact pads disposed on a printed circuit board assembly having a USB controller and flash memory devices disposed thereon.