Patents by Inventor Abraham SLACHTER
Abraham SLACHTER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12044980Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.Type: GrantFiled: October 30, 2019Date of Patent: July 23, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Abraham Slachter, Wim Tjibbo Tel, Daan Maurits Slotboom, Vadim Yourievich Timoshkov, Koen Wilhelmus Cornelis Adrianus Van Der Straten, Boris Menchtchikov, Simon Philip Spencer Hastings, Cyrus Emil Tabery, Maxime Philippe Frederic Genin, Youping Zhang, Yi Zou, Chenxi Lin, Yana Cheng
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Publication number: 20240126181Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: November 16, 2023Publication date: April 18, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Publication number: 20240012337Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.Type: ApplicationFiled: August 3, 2023Publication date: January 11, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Mark John MASLOW, Koenraad VAN INGEN SCHENAU, Patrick WARNAAR, Abraham SLACHTER, Roy ANUNCIADO, Simon Hendrik Celine VAN GORP, Frank STAALS, Marinus JOCHEMSEN
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Patent number: 11822255Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: GrantFiled: July 30, 2021Date of Patent: November 21, 2023Assignee: ASML Netherlands B.V.Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson
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Patent number: 11768442Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.Type: GrantFiled: October 25, 2022Date of Patent: September 26, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo Tel, Mark John Maslow, Koenraad Van Ingen Schenau, Patrick Warnaar, Abraham Slachter, Roy Anunciado, Simon Hendrik Celine Van Gorp, Frank Staals, Marinus Jochemsen
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Publication number: 20230081821Abstract: Described herein is a method for training a machine learning model to determine a source of error contribution to multiple features of a pattern printed on a substrate. The method includes obtaining training data having multiple datasets, wherein each dataset has error contribution values representative of an error contribution from one of multiple sources to the features, and wherein each dataset is associated with an actual classification that identifies a source of the error contribution of the corresponding dataset; and training, based on the training data, a machine learning model to predict a classification of a reference dataset of the datasets such that a cost function that determines a difference between the predicted classification and the actual classification of the reference dataset is reduced.Type: ApplicationFiled: November 14, 2022Publication date: March 16, 2023Applicant: ASML Netherlands B.V.Inventors: Chrysostomos BATISTAKIS, Maxim PISARENCO, Bernardo Andres OYARZUN RIVERA, Abraham SLACHTER
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Publication number: 20230076218Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.Type: ApplicationFiled: February 18, 2021Publication date: March 9, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Koenraad VAN INGEN SCHENAU, Abraham SLACHTER, Vadim Yourievich TIMOSHKOV, Marleen KOOIMAN, Marie-Claire VAN LARE, Hermanus Adrianus DILLEN, Stefan HUNSCHE, Luis Alberto Colina Sant COLINA, Aiqin JIANG, Fuming WANG, Sudharshanan RAGHUNATHAN
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Publication number: 20230058839Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.Type: ApplicationFiled: October 25, 2022Publication date: February 23, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Mark John MASLOW, Koenraad VAN INGEN SCHENAU, Patrick WARNAAR, Abraham SLACHTER, Roy ANUNCIADO, Simon Hendrick Celine VAN GRORP, Frank STAALS, Marinus JOCHEMSEN
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Patent number: 11513442Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.Type: GrantFiled: August 22, 2018Date of Patent: November 29, 2022Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Mark John Maslow, Koenraad Van Ingen Schenau, Patrick Warnaar, Abraham Slachter, Roy Anunciado, Simon Hendrik Celine Van Gorp, Frank Staals, Marinus Jochemsen
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Publication number: 20220342316Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.Type: ApplicationFiled: September 3, 2020Publication date: October 27, 2022Applicant: ASML Netherlands B.V.Inventors: Marleen KOOIMAN, Maxim PISARENCO, Abraham SLACHTER, Mark John MASLOW, Bernardo Andres OYARZUN RIVERA, Wim Tjibbo TEL, Ruben Cornelis MAAS
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Publication number: 20210397172Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.Type: ApplicationFiled: October 30, 2019Publication date: December 23, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Wim Tjibbo TEL, Daan Maurits SLOTBOOM, Vadim Yourievich TIMOSHKOV, Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN, Boris MENCHTCHIKOV, Simon Philip Spencer HASTINGS, Cyrus Emil TABERY, Maxime Philippe Frederic GENIN, Youping ZHANG, Yi ZOU, Chenxi LIN, Yana CHENG
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Publication number: 20210356874Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Patent number: 11087065Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.Type: GrantFiled: August 15, 2019Date of Patent: August 10, 2021Assignee: ASML Netherlands B.V.Inventors: Sunit Sondhi Mahajan, Abraham Slachter, Brennan Peterson, Koen Wilhelmus Cornelis Adrianus Van Der Straten, Antonio Corradi, Pieter Joseph Marie Wöltgens
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Patent number: 11079687Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: GrantFiled: December 17, 2018Date of Patent: August 3, 2021Assignee: ASML Netherlands B.V.Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson
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Publication number: 20210149312Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.Type: ApplicationFiled: August 22, 2018Publication date: May 20, 2021Inventors: Wim Tjibbo TEL, Mark John MASLOW, Koenraad VAN INGEN SCHENAU, Patrick WARNAAR, Abraham SLACHTER, Roy ANUNCIADO, Simon Hendrik Celine VAN GORP, Frank STAALS, Marinus JOCHEMSEN
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Publication number: 20210018850Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: December 17, 2018Publication date: January 21, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Publication number: 20200097633Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.Type: ApplicationFiled: August 15, 2019Publication date: March 26, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Sunit Sondhi MAHAJAN, Abraham SLACHTER, Brennan PETERSON, Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN, Antonio CORRADI, Pieter Joseph Marie WÖLTGENS