Abstract: A method of partitioning design shapes, in an E-beam lithography system, into subshapes such that a constant dose may be applied to an E-beam sensitive resist within each subshape. Within each subshape the constant dose corresponds to an approximation to an indicator function, indicative of the degree of the proximity effect, such as the effective exposure of the resist from backscattered electrons or the required dose. The error of the approximation is equal to a predetermined value for each subshape, and can depend upon the position of the subshape within the shape and the influence of errors in the applied dose at that position on the position, on development, of the edge of the shape.

Abstract: A method of proximity correction in an E-beam lithography system wherein each design shape is contracted by a predetermined bias and the E-beam dose required at any given point of the design is determined such that each of the design shapes is enlarged, on development, by the value of the predetermined bias, the determination of the E-beam dose being made in accordance with a predetermined relationship between an indicator, such as the electron backscatter, and the required E-beam dose, the indicator being defined for a plurality of points arranged on a coarse grid on the design and being indicative of the degree of the proximity effect at the respective point, the determination of the required dose being made by solving, at each of the plurality of points on the design, an integral equation relating the indicator to the E-beam dose distribution.