Patents by Inventor Abram Jakubowicz
Abram Jakubowicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230411930Abstract: A mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a suitable mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.Type: ApplicationFiled: August 2, 2023Publication date: December 21, 2023Applicant: II-VI Delaware, Inc.Inventors: Mirko Hoser, Abram Jakubowicz, Tomi Leinonen
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Patent number: 11757252Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.Type: GrantFiled: March 1, 2022Date of Patent: September 12, 2023Assignee: II-VI Delaware, Inc.Inventors: Mirko Hoser, Abram Jakubowicz, Tomi Leinonen
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Publication number: 20230246415Abstract: A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Nadhum Kadhum Zayer, Abram Jakubowicz, Jean Axel Edmond Teissier, Susanne Pawlik
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Patent number: 11652332Abstract: A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.Type: GrantFiled: August 11, 2020Date of Patent: May 16, 2023Assignee: II-VI DELAWARE, INCInventors: Nadhum Kadhum Zayer, Abram Jakubowicz, Jean Axel Edmond Teissier, Susanne Pawlik
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Patent number: 11411373Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.Type: GrantFiled: July 10, 2020Date of Patent: August 9, 2022Assignee: II-VI Delaware, Inc.Inventors: Abram Jakubowicz, Martin Sueess
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Publication number: 20220190558Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.Type: ApplicationFiled: March 1, 2022Publication date: June 16, 2022Applicant: II-VI Delaware, Inc.Inventors: Mirko Hoser, Abram Jakubowicz, Tomi Leinonen
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Patent number: 11289881Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.Type: GrantFiled: May 8, 2019Date of Patent: March 29, 2022Assignee: II-VI Delaware, Inc.Inventors: Mirko Hoser, Abram Jakubowicz, Tomi Leinonen
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Publication number: 20220052510Abstract: A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.Type: ApplicationFiled: August 11, 2020Publication date: February 17, 2022Inventors: Nadhum Kadhum Zayer, Abram Jakubowicz, Jean Axel Edmond Teissier, Susanne Pawlik
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Publication number: 20200358252Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.Type: ApplicationFiled: May 8, 2019Publication date: November 12, 2020Applicant: II-VI Delaware, Inc.Inventors: Mirko Hoser, Abram Jakubowicz, Tomi Leinonen
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Publication number: 20200343692Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.Type: ApplicationFiled: July 10, 2020Publication date: October 29, 2020Applicant: II-VI Delaware, Inc.Inventors: Abram Jakubowicz, Martin Sueess
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Patent number: 10714900Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.Type: GrantFiled: June 4, 2018Date of Patent: July 14, 2020Assignee: II-VI Delaware, Inc.Inventors: Abram Jakubowicz, Martin Sueess
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Patent number: 10505332Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. A process for training (calibrating) a laser-based ex-situ conditioning system provides three-dimensional spatial alignment between the focused beam and a defined location on the edge-emitting laser diode surface, while also determining an optimum performance window (in terms of power density and exposure interval) for efficient and effective conditioning.Type: GrantFiled: May 8, 2019Date of Patent: December 10, 2019Assignee: II-VI Delaware, Inc.Inventors: Abram Jakubowicz, Martin Sueess
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Publication number: 20190372308Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.Type: ApplicationFiled: June 4, 2018Publication date: December 5, 2019Applicant: II-VI Delaware, Inc.Inventors: Abram Jakubowicz, Martin Sueess
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Publication number: 20190372297Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. A process for training (calibrating) a laser-based ex-situ conditioning system provides three-dimensional spatial alignment between the focused beam and a defined location on the edge-emitting laser diode surface, while also determining an optimum performance window (in terms of power density and exposure interval) for efficient and effective conditioning.Type: ApplicationFiled: May 8, 2019Publication date: December 5, 2019Applicant: II-VI Delaware, Inc.Inventors: Abram Jakubowicz, Martin Sueess
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Patent number: 10418781Abstract: An edge-emitting laser diode is formed to include a quantum well passivation structure comprising alternating thin layers of a semiconductor material (e.g., silicon, germanium, or antimony) and a dielectric barrier. The semiconductor layers are sufficiently thin to form quantum wells, with the dielectric layers functioning as barriers between adjacent quantum wells. The semiconductor layer adjacent to the facet is formed of crystalline material, with the remaining quantum wells formed of amorphous material. The structure, and the method of forming the structure, results in a configuration that exhibits higher levels of COD than devices using a bulk (thick) silicon passivation layer.Type: GrantFiled: July 6, 2018Date of Patent: September 17, 2019Assignee: II-VI Delaware, Inc.Inventor: Abram Jakubowicz
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Patent number: 8908729Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.Type: GrantFiled: June 28, 2006Date of Patent: December 9, 2014Assignee: II-VI Laser Enterprise GmbHInventors: Christoph Harder, Abram Jakubowicz, Nicolai Matuschek, Joerg Troger, Michael Schwarz
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Patent number: 8831062Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.Type: GrantFiled: April 6, 2011Date of Patent: September 9, 2014Assignee: II-VI Laser Enterprise GmbHInventors: Hans-Ulrich Pfeiffer, Andrew Cannon Carter, Jörg Troger, Norbert Lichtenstein, Michael Schwarz, Abram Jakubowicz, Boris Sverdlov
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Publication number: 20130070800Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region.Type: ApplicationFiled: April 6, 2011Publication date: March 21, 2013Inventors: Hans-Ulrich Pfeiffer, Andrew Cannon Carter, Jörg Troger, Norbert Lichtenstein, Michael Schwarz, Abram Jakubowicz, Boris Sverdlov
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Patent number: 8111727Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided.Type: GrantFiled: June 28, 2006Date of Patent: February 7, 2012Assignee: Oclaro Technology LimitedInventors: Christoph Harder, Abram Jakubowicz, Nicolai Matuschek, Joerg Troger, Michael Schwarz
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Publication number: 20100220762Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided.Type: ApplicationFiled: June 28, 2006Publication date: September 2, 2010Applicant: BOOKHAM TECHNOLOGY PLCInventors: Christoph Harder, Abram Jakubowicz, Nicolai Matuschek, Joerg Troger, Michael Schwarz