Patents by Inventor Abu N. M. M. Choudhury

Abu N. M. M. Choudhury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual species ion implantation of ternary compounds based on In-Ga-As
    Patent number: 4494995
    Abstract: A method for Ion implantation using multiple energy Be.sup.+ to produce p-type regions in n-In.sub.0.53 Ga.sub.0.47 As. A simple technique is used to develop capless annealing of InGaAs up to 700.degree. C. The ion implantation of silicon is then accomplished to create n.sup.+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.
    Type: Grant
    Filed: March 1, 1983
    Date of Patent: January 22, 1985
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Kamal Tabatabaie-Alavi, Abu N. M. M. Choudhury, Nancy J. Slater Gabriel, Clifton G. Fonstad
  • Low resistance ohmic contact
    Patent number: 4414076
    Abstract: A method for obtaining a very low resistance ohmic contact on p-type Indium hosphide (InP) by light-assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, has been used for producing patterned, small area contacts on device structures and is compatible with established n-type ohmic contacting procedures.
    Type: Grant
    Filed: March 1, 1983
    Date of Patent: November 8, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Kamal Tabatabaie-Alavi, Abu N. M. M. Choudhury, Nancy J. (Slater) Gabriel, Clifton G. Fonstad