Abstract: A thin film deposition method may include preparing a substrate structure having an opening region formed in a vertical direction and a plurality of holes formed in a horizontal direction in each of two side portions exposed by the opening region, and adsorbing an inhibitor to surfaces of the substrate structure so that an adsorption density of the inhibitor outside of the plurality of holes is higher than an adsorption density inside of the plurality of holes by adsorbing the inhibitor in a deposition environment in which a gas diffusivity is larger in the vertical direction than in the horizontal direction. A deposition process of a material film on the inside and outside of the plurality of holes is then performed, wherein a deposition rate of the material film may vary according to the adsorption density of the inhibitor.