Abstract: An enhanced ESD clamp is provided with a resistor connected between the body terminal and the source terminal of a MOSFET device. In one exemplary embodiment, the MOSFET device is a grounded-gate NMOS (ggNMOS) transistor device with the resistor (“body resistor”) connected externally to the MOSFET device. In another embodiment, the MOSFET device is a ggPMOS transistor device. In yet another embodiment, the body resistor is disposed within and connected internally to the MOSFET device. In any event, the resistance value of the body resistor determines the level to which the trigger voltage of the ESD clamp will be reduced when an ESD event occurs.

Abstract: An enhanced layout for a multiple-finger ESD protection device has several embodiments. In these embodiments, the base contacts of the NPN (or PNP) transistors utilized as voltage clamps in the multiple-finger NPN-based (or PNP-based) multiple-finger ESD protection device are disposed at opposite edges of the multiple-finger ESD protection device and oriented perpendicularly to the orientation of the fingers in the multiple-finger ESD protection device. Similarly, the body contacts of the NMOS (or PMOS) transistors utilized as voltage clamps in the multiple-finger NMOS-based (or PMOS-based) multiple-finger ESD protection device are disposed at opposite edges of the multiple-finger ESD protection device and oriented perpendicularly to the orientation of the fingers in the multiple-finger ESD protection device.

Abstract: An enhanced layout for a multiple-finger ESD protection device has several embodiments. In these embodiments, the base contacts of the NPN (or PNP) transistors utilized as voltage clamps in the multiple-finger NPN-based (or PNP-based) multiple-finger ESD protection device are disposed at opposite edges of the multiple-finger ESD protection device and oriented perpendicularly to the orientation of the fingers in the multiple-finger ESD protection device. Similarly, the body contacts of the NMOS (or PMOS) transistors utilized as voltage clamps in the multiple-finger NMOS-based (or PMOS-based) multiple-finger ESD protection device are disposed at opposite edges of the multiple-finger ESD protection device and oriented perpendicularly to the orientation of the fingers in the multiple-finger ESD protection device.

Abstract: An enhanced ESD clamp is provided with a resistor connected between the body terminal and the source terminal of a MOSFET device. In one exemplary embodiment, the MOSFET device is a grounded-gate NMOS (ggNMOS) transistor device with the resistor (“body resistor”) connected externally to the MOSFET device. In another embodiment, the MOSFET device is a ggPMOS transistor device. In yet another embodiment, the body resistor is disposed within and connected internally to the MOSFET device. In any event, the resistance value of the body resistor determines the level to which the trigger voltage of the ESD clamp will be reduced when an ESD event occurs.