Abstract: A system and method for optical coupling. In some embodiments, the system includes a first semiconductor chip, including a semiconductor optical amplifier; and a second semiconductor chip, including a fork coupler. The fork coupler may includes a plurality of waveguide fingers, and an output waveguide. The waveguide fingers may be configured to guide, together, a first optical mode of the fork coupler; and the fork coupler may be arranged such that an output mode of the semiconductor optical amplifier couples to the first optical mode of the fork coupler.

Abstract: A waveguide mode filter. In some embodiments, the waveguide mode filter includes a first section of waveguide. The first section may have: a first end; a second end; a rate of change of curvature having a magnitude not exceeding 15/mm2 within the first section; a curvature having a magnitude of at most 0.03/mm at the first end; and a curvature having a magnitude of at least 0.1/mm at the second end.

Abstract: A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.

Abstract: The invention refers to a photonic integrated circuit (PIC), the photonic integrated circuit comprising: at least one laser, the laser having a laser output, a measuring portion including a measuring port and configured to measure an intensity and/or wavelength of light input at the measuring port, and an output portion configured to output light from the photonic integrated circuit to the portion of the tissue, wherein optionally the laser includes a ring resonator laser, a laser generating light having a fixed wavelength, a laser being constructed using hybrid integration, and/or a tunable laser.

Abstract: A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.

Abstract: A photonic module, comprising a first waveguide; a second waveguide, disposed on an opposing side of the first waveguide to a substrate; and, a coupling section. One of the first waveguide and the second waveguide is formed of crystalline silicon. The other of the first waveguide and the second waveguide is formed of amorphous silicon. The coupling section is configured to couple light between the first waveguide and the second waveguide. Such a silicon photonic module has enhanced coupling and transmission properties in contrast to conventional modules.

Abstract: A waveguide grating. The waveguide grating includes a rib composed of a first material. A first portion of the waveguide has a first layer on the rib, the first layer being composed of a second material; and a second layer on the first layer, the second layer being composed of a third material, the third material having a higher index of refraction than the first material.

Abstract: An optical out-coupler unit for out-coupling light from a waveguide, comprising a substrate having a planar top surface, a waveguide arranged on the top surface of the substrate and having a facet, a reflective surface, wherein the reflective surface is arranged spaced apart from the facet and opposing the facet, wherein the reflective surface is inclined with respect to a normal to the top surface of the substrate by more than 45°. The optical out-coupler may be part of a photonic integrated chip (PIC).

Abstract: A waveguide mode filter. In some embodiments, the waveguide mode filter includes a first section of waveguide. The first section may have: a first end; a second end; a rate of change of curvature having a magnitude not exceeding 15/mm2 within the first section; a curvature having a magnitude of at most 0.03/mm at the first end; and a curvature having a magnitude of at least 0.1/mm at the second end.

Abstract: A photonic integrated circuit. In some embodiments, the photonic integrated circuit includes: a waveguide; and a waveguide facet, a first end of the waveguide being at the waveguide facet, a first angle being an angle between: the waveguide at the first end of the waveguide and the normal to the waveguide facet, the first angle being at least 5 degrees, a first section of the waveguide having a first end at the waveguide facet and a second end, the first section having: a curvature of less than 0.01/mm at the first end of the first section, a curvature of less than 0.01/mm at the second end of the first section, and a curvature of at least 0.1/mm at a point between the first end and the second end.

Abstract: A waveguide grating. The waveguide grating includes a rib composed of a first material. A first portion of the waveguide has a first layer on the rib, the first layer being composed of a second material; and a second layer on the first layer, the second layer being composed of a third material, the third material having a higher index of refraction than the first material.

Abstract: A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.

Abstract: The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.

Abstract: Structures with waveguides in multiple levels and methods of fabricating a structure that includes waveguides in multiple levels. A waveguide crossing has a first waveguide and a second waveguide arranged to intersect the first waveguide. A third waveguide is displaced vertically from the waveguide crossing, The third waveguide includes a portion having an overlapping arrangement with a portion of the first waveguide. The overlapping portions of the first and third waveguides are configured to transfer optical signals between the first waveguide and the third waveguide.

Abstract: The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to three dimensional (3D) optical interconnect structures and methods of manufacture. The structure includes: a first structure having a grating coupler and a first optical waveguide structure; and a second structure having a second optical waveguide structure in alignment with the first optical waveguide structure and which has a modal effective index that matches to the first optical waveguide structure.

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. An electro-optic modulator is arranged over a portion of a waveguide core. The electro-optic modulator includes an electrode, an active layer arranged adjacent to the electrode, and a dielectric layer including a portion that has a lateral arrangement between the electrode and the active layer. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied to the electrode and the active layer.

Abstract: Waveguiding structures and methods of fabricating a waveguiding structure. The waveguiding structure includes a waveguide and an array of semiconductor fins that are arranged at least in part inside the waveguide.

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator is arranged over a portion of a first waveguide core. The electro-optic modulator may include an electrode, an active layer, a second waveguide core, and a dielectric layer that is arranged between the active layer and the second waveguide core. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied between the electrode and the first waveguide core.

Abstract: Structures including a waveguide core and methods of fabricating a structure including a waveguide core. A back-end-of-line interconnect structure includes a cap layer, an interlayer dielectric layer, and one or more metal features embedded in the interlayer dielectric layer. The interlayer dielectric layer is stacked in a vertical direction with the cap layer. The one or more metal features have an overlapping arrangement in a lateral direction with the waveguide core, which is arranged under the back-end-of-line interconnect structure.