Abstract: The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers.

Abstract: The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers.

Abstract: A method for the manufacture of large area silicon crystal bodies suitable for use in the manufacture of solar cells wherein silicon powder having a small grain size is used as the starting material. This powder is compressed to form a thin layer in a suitable form, the form having at least a surface composed of silicon or a silicon compound. The form is filled to a depth approximating the final dimensions of the article. The powder is sintered in the form, and the compressed, sintered layer is converted into a self-supporting silicon foil. This foil is melted partially up to at least half its thickness and recrystallized in a two-stage temperature treatment. The melting occurs by means of a single-sided energy irradiation. The silicon foil is not deteriorated in terms of its mechanical stability and shaped by means of the single-sided, optical type heating.