Abstract: The invention concerns a method for making a piezoelectrical device, whose electrode layers contain copper. The usage of copper in the electrode layers is enabled by a debindering process, which is carried out by steam.

Abstract: A piezoelectric material contains a material with the molecular formula P1?c?dDcZd, wherein: 0<c?0.15 and 0?d?0.5, wherein P represents the composition Pb(Zr1?yTiy)O3 and wherein: 0.50?1?y?0.60, wherein Z represents an additional component of the perovskite type of structure, wherein D represents a material according to the general formula [(M1O)1?p(M2O)p]a[Nb2O5]1?a, wherein M1 represents Ba1?tSrt with 0?t?1 and M2 represents strontium or calcium and wherein: ?<a<1 and 0<p<1, wherein the material D contains the cryolite type of structure.

Abstract: A ceramic material with a negative temperature coefficient of specific resistance has the general formula: [{(SE1III,SE2III)1?x(M1II,M2II)x}(Cr1?y?zMny(Me1III,Me2III)z)O3] wherein SE1III and SE2III are different rare-earth metal cations, M1II and M2II are selected from CaII, SrII, and Me1III and Me2III are redox-stable, trivalent metal cations, wherein the following applies with respect to the parameters: 0<x<1; 0<z<1; 0<y<1?z.

Abstract: A piezoelectric actuator includes a stack of piezoceramic layers and electrodes among the piezoceramic layers. At least one edge region of the stack does not include electrodes. A cover layer is at the at least one edge region. The cover layer has a dielectric constant that is less than a dielectric constant of a piezoceramic layer.

Abstract: An electrical component is specified with a sensor element, which is embedded in a plate arrangement. The plate arrangement includes at least three plates and conductor tracks, which are located between them and are conductively connected with the sensor element. At least two of the conductor tracks have exposed areas. Furthermore, a method for the encapsulation of a sensor element and a method for the production of a plate arrangement are specified.

Abstract: The invention relates to a piezoelectric ceramic material having the general composition ABO3 with at least a proportion of the PZT ceramic having a composition of the invention with Cu cations. The proportion of Zr and Ti cations is selected based upon the content of Cu cations, such that the ceramic material is tailored to the morphotropic phase boundary. The invention further discloses a method for producing a ceramic material of this type.

Abstract: A piezoelectric actuator includes a stack of piezoceramic layers and electrodes among the piezoelectric layers. At least one edge region of the stack does not include electrodes. A cover layer is at the at least one edge region. The cover layer has a dielectric constant that is less than a dielectric constant of a piezoceramic layer.

Abstract: Piezoelectric Ceramic Material, Multilayer Component, and Method for Producing Said Ceramic Material The invention relates to a piezoelectric ceramic material having the general composition ABO3 with at least a proportion of the PZT ceramic having a composition of the invention with Cu cations. The proportion of Zr and Ti cations is selected based upon the content of Cu cations, such that the ceramic material is tailored to the morphotropic phase boundary. The invention further discloses a method for producing a ceramic material of this type.

Abstract: A ceramic material includes first and second ceramic materials. The first ceramic material has a perovskite structure and defines a host lattice. The first ceramic material contains lead, zirconium and titanium, e.g., lead zirconate titanate. The second ceramic material has a cryolite structure. The ceramic material may be part of a piezo-actuator containing ceramic layers formed of the ceramic material.

Abstract: The present invention relates to a piezoelectrical device whose electrode layers contain copper. The usage of copper in electrode layers is enabled by a debindering process, which is carried out by steam.

Abstract: A ceramic mass has a phase-heterogeneous ceramic of m weight percent of a phase composed of BaNd2Ti4O12 with negative temperature coefficient of the dielectric constant and 100-m weight percent of a phase composed of Nd2Ti2O7 with positive temperature coefficient of the dielectric constant, with m having a value of 50<m<70, and an additive of glass frit that contains ZnO, B2O3 and SiO2 and whose weight amounts to between 3 and 10 weight percent of the ceramic. The ceramic mass is used to construct a multi-layer capacitor with copper electrodes.

Abstract: The invention is directed to a ceramic comprising a phase-heterogeneous ceramic comprising m weight percent of a phase composed of BaNd2Ti4O12 with negative temperature coefficient of the dielectric constant and 100-m weight percent of a phase composed of Nd2Ti2O7 with positive temperature coefficient of the dielectric constant, whereby 50<m<70 applies, and comprising an additive of glass frit that contains ZnO, B2O3 and SiO2 and whose weight amounts to between 3 and 10 weight percent of the ceramic. The invention is also directed to a multi-layer capacitor having the ceramic mass. The inventive ceramic mass has the advantage that it can already be produced at a maximum calcination temperature of 1180° C. and that a minimization of the temperature coefficient of the dielectric constant is possible by means of a suitable selection of the parameter m. Over and above this, the inventive ceramic mass can be sintered together with copper electrodes.

Abstract: The present invention relates to a piezoelectrical device whose electrode layers contain copper. The usage of copper in electrode layers is enabled by a debindering process, which is carried out by steam.

Abstract: A high-temperature gas sensor for the detection of the heat tone of combustible gases includes a semiconducting ceramic layer with thermistor properties. The semiconducting ceramic layer is formed of an oxide ceramic semiconducting material having a defined crystalline structure and a thermistor characteristic of high sensitivity. A process for the manufacture of the high-temperature gas sensor includes sintering a loosely structured layer of powder particles of an oxide semiconductor with both a defined composition and high sinter activity for achieving a required high porosity of a semiconducting ceramic layer with thermistor properties.

Abstract: A CO.sub.2 sensor includes a body of solid electrolyte ceramic with alkali ion conductivity, and two electrodes of conductor material being inert with respect to the solid electrolyte ceramic. At least one of the electrodes is at least partially permeable, and the solid electrolyte ceramic is galvanically prepolarized. A measurement circuit configuration includes the CO.sub.2 sensor and a voltage measuring device coupled to the electrodes of the solid electrolyte ceramic body.

Abstract: A sintered ceramic for high-stability thermistors is based on Ni.sub.x Mn.sub.3-x O.sub.4, where x>0. The sintered ceramic has the general formula Cu.sub.z Fe.sub.1-y Ni.sub.x Mn.sub.2-x-z+y O.sub.4, where z=0 to 1.5; y =-0.1 to 0.02; and 1>z>0.5. A method for producing a sintered ceramic for high-stability thermistors includes converting a mixture of starting materials MnO.sub.x, NiO and Fe.sub.2 O.sub.3 into a stable ceramic of an iron-nickel-manganese oxide spinel phase with high thermal stability and aging stability. Another method for producing a sintered ceramic for high-stability thermistors includes calcining a mixture of nickel carbonate, manganese carbonate and .alpha.-iron (III) oxide by heating to over 600.degree. C. in air. After granulometric preparation and compression molding, sintered ceramic bodies are produced by sintering in air or in an oxygen atmosphere.

Abstract: A sintering ceramic for stable high-temperature thermistors includes a system of matter containing manganese (IV) and a content of a basic oxide. A method for producing a sintering ceramic for stable high-temperature thermistors includes calcining a mixture of SrCO.sub.3 and Mn.sub.2 O.sub.3 or Mn.sub.3 O.sub.4 ; adding an oxide hydroxide of a dopant in a molar quantity x to an aqueous suspension of the calcined oxide mixture; and then carrying out a compacting densification of the system of matter.

Abstract: As a photoconductive material there is provided a carrier having a coating thereon of a germanium-sulphur-lead alloy or a germanium-sulphur-tin alloy.