Abstract: A mass separation filter has a first magnet forming a first magnetic field in an orthogonal direction to a beam axis of an ion beam, a second magnet sequentially arranged with the first magnet along the beam axis, parallel with and facing the opposite direction of the first magnet, and forming a second magnetic field orthogonal to the beam axis; and a collimator wall formed within the first and second magnetic fields that forms a transfer channel from a first curved channel deflected from the first magnetic field to a second curved channel deflected by the second magnetic field in a direction the reverse of the first magnetic field. Incident ions pass through a channel inversely curved by the magnetic fields of the first and second magnets according to the mass separation filter, and it is possible to lead ions of a desired mass in the same direction as the beam axis.

Abstract: A mass separation filter has a first magnet forming a first magnetic field in an orthogonal direction to a beam axis of an ion beam, a second magnet sequentially arranged with the first magnet along the beam axis, parallel with and facing the opposite direction of the first magnet, and forming a second magnetic field orthogonal to the beam axis; and a collimator wall formed within the first and second magnetic fields that forms a transfer channel from a first curved channel deflected from the first magnetic field to a second curved channel deflected by the second magnetic field in a direction the reverse of the first magnetic field. Incident ions pass through a channel inversely curved by the magnetic fields of the first and second magnets according to the mass separation filter, and it is possible to lead ions of a desired mass in the same direction as the beam axis.

Abstract: An ion source (26) includes a plasma confinement chamber and a plasma electrode (70) forming a generally planar wall section of the plasma confinement chamber. The plasma electrode (70) has at least one opening (84, 86) for allowing an ion beam (88) to exit the confinement chamber and has a set of magnets (78, 80, 82) that generate a magnetic field extending across the openings (84, 86) in the plasma electrode (70). The openings (84, 86) in the plasma electrode (70) can be fashioned as elongated slots or circular openings aligned along the axis. The ion source (26) can further include a power supply (72) for negatively biasing the plasma electrode relative to the plasma confinement chamber and an insulator (74) for electrically insulating the plasma electrode (70). Cooling tubes can also be provided to transfer heat away from the magnets in the plasma electrode (70).

Abstract: An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture.

Abstract: An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system.

Abstract: A magnetic filter (90) for an ion source (26) is provided. The ion source comprises a housing defining a plasma confinement chamber (76) in which a plasma including ions is generated by ionizing a source material. The housing includes a generally planar wall (50) in which are formed a plurality of elongated apertures (64) through which an ion beam (84) may be extracted from the plasma. The plurality of elongated openings are oriented substantially parallel to each other and to a first axis (66) which lies within the planar wall the first axis being substantially orthogonal to a second axis (68) which also lies within the planar wall. The magnetic filter (90) is disposed within the plasma confinement chamber (76). The magnetic filter separates the plasma confinement chamber into a primary region (86) and a secondary region (88). The magnetic filter comprises a plurality of parallel elongated magnets (90a-90n), oriented at an angle .theta.

Abstract: A system and method for conductively and/or convectively transferring heat away from a workpiece that has been processed by a processing system, such as an ion implantation system. The conductive transfer of heat from the workpiece is effectuated by disposing the workpiece in relatively close proximity with a floor of a loadlock, which is maintained at a relatively cool temperature. The chamber pressure is disposed at a selected pressure by a pressure regulator and a vacuum pressure is applied to the backside of the workpiece closest to draw the workpiece into contact with the chamber floor, thereby effecting heat transfer from the workpiece to the cooling surface.

Abstract: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.

Abstract: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

Abstract: An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system.

Abstract: The present invention provides a loadlock assembly for a high throughput ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The loadlock assembly increases the throughput of the implantation system by continuously cycling workpieces through the process chamber, thus increasing the system's throughput. The loadlock assembly includes a plurality of loadlock stacking elements that are axially positioned relative to each other to form a stacked array of loadlocks. Additionally, the loadlocks of the array are configured to nest with an adjacent loadlock to form a stackable and nestable loadlock assembly.

Abstract: A process for producing a workpiece by compacting powder material, includes the steps of applying compression to the material along selected preferably orthogonal axes in compression steps, each compression step causing a volume reduction selected to produce the desired final compaction and orientation of material in the workpiece for that axis.