Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput.

Abstract: An ion-cut machine and method for slicing silicon ingots into thin wafers for solar cell manufacturing is set forth, amongst other embodiments and applications. One embodiment comprises two carousels: first carousel (100) adapted for circulating workpieces (55) under ion beam (10) inside target vacuum chamber (30) while second carousel (80) is adapted for carrying implanted workpieces through a sequence of process stations that may include annealing (60), cleaving (70), slice output (42), ingot replacement (52), handle bonding, cleaning, etching and others. Workpieces are essentially swapped between carousels. In one embodiment, the swapping system comprises a high throughput load lock (200) disposed in the wall of the vacuum chamber (30), a vacuum swapper (110) swapping workpieces between first carousel (100) and load lock (200), and an atmospheric swapper (90) swapping workpieces between load lock (200) and second carousel (80).

Abstract: Processes and machines for producing large area sheets or films of crystalline, polycrystalline, or amorphous material are set forth; the production of such sheets being valuable for the manufacturing of solar photovoltaic cells, flat panel displays and the like. The surface of rotating cylindrical workpiece (10) is implanted with ion beam (30), whereby a layer of weakened material is formed below the surface. Sheet (20) is detached and peeled off, producing arbitrarily large, monolithic sheets. The sheet may be supported on a temporary or permanent handle (50) such as a glass sheet or a polymer film. Pinch roller (60) may assist in the lamination of handle (50) to sheet (20) before or after the point of separation of sheet (20) from workpiece (10). The implantation, annealing and separation processes are adapted to encourage the material to separate along the implanted layer rather than a particular crystal plane.

Abstract: An ion-cut machine and method for slicing silicon ingots into thin wafers for solar cell manufacturing is set forth, amongst other embodiments and applications. One embodiment comprises two carousels: first carousel (100) adapted for circulating workpieces (55) under ion beam (10) inside target vacuum chamber (30) while second carousel (80) is adapted for carrying implanted workpieces through a sequence of process stations that may include annealing (60), cleaving (70), slice output (42), ingot replacement (52), handle bonding, cleaning, etching and others. Workpieces are essentially swapped between carousels. In one embodiment, the swapping system comprises a high throughput load lock (200) disposed in the wall of the vacuum chamber (30), a vacuum swapper (110) swapping workpieces between first carousel (100) and load lock (200), and an atmospheric swapper (90) swapping workpieces between load lock (200) and second carousel (80).

Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence.

Abstract: Processes and machines for producing large area sheets or films of crystalline, polycrystalline, or amorphous material are set forth; the production of such sheets being valuable for the manufacturing of solar photovoltaic cells, flat panel displays and the like. In one embodiment the surface of a rotating cylindrical workpiece (10) is implanted with an ion beam (30), whereby a layer of weakened material if formed below the surface, whereby sheet (20) may be detached and peeled off in an unrolling fashion, producing arbitrarily large, monolithic sheets. Optional annealing heater (40) may be used to improve the quality of the film. The sheet may also be optionally supported on a temporary or permanent handle (50) which may be rigid sheet such as glass, or a flexible sheet, such as a polymer film. Representative pinch roller (60) may assist in the lamination of handle (50) to sheet (20) before or after the point of separation of sheet (20) from workpiece (10).

Abstract: The invention is a plasma-generating device useful in a wide variety of industrial processes. The plasma is formed in a chamber having a toroidal topology, and is heated inductively. As with all inductive plasmas, a primary coil carries an applied AC current, which, in turn, generates a corresponding applied AC magnetic flux inside the plasma. This flux induces current to flow through the plasma in closed paths that encircle the flux, thereby heating and maintaining the plasma. In this invention, the applied AC current flows through the primary coil around substantially the short poloidal direction on the torus. Accordingly, the applied magnetic flux is caused to circulate through the plasma along the larger toroidal direction. Finally, the current induced within the plasma will flow in the poloidal direction, anti-parallel to the applied primary current.

Abstract: The invention is a plasma-generating device useful in a wide variety of industrial processes. The plasma is formed in a chamber having a toroidal topology, and is heated inductively. As with all inductive plasmas, a primary coil carries an applied AC current, which, in turn, generates a corresponding applied AC magnetic flux inside the plasma. This flux induces current to flow through the plasma in closed paths that encircle the flux, thereby heating and maintaining the plasma. In this invention, the applied AC current flows through the primary coil around substantially the short poloidal direction on the torus. Accordingly, the applied magnetic flux is caused to circulate through the plasma along the larger toroidal direction. Finally, the current induced within the plasma will flow in the poloidal direction, anti-parallel to the applied primary current.