Patents by Inventor Adam B. Phillips

Adam B. Phillips has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11189748
    Abstract: Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: November 30, 2021
    Assignee: The University of Toledo
    Inventors: Michael J. Heben, Adam B. Phillips, Fadhil K. Alfadhili, Randall J. Ellingson, Ebin Bastola, Dipendra Pokhrel, Kamala Khanal Subedi
  • Publication number: 20200343403
    Abstract: Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.
    Type: Application
    Filed: April 29, 2020
    Publication date: October 29, 2020
    Applicant: The University of Toledo
    Inventors: Michael J. Heben, Adam B. Phillips, Fadhil K. Alfadhili, Randall J. Ellingson, Ebin Bastola, Dipendra Pokhrel, Kamala Khanal Subedi
  • Patent number: 10043922
    Abstract: A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: August 7, 2018
    Assignee: The University Of Toledo
    Inventors: Michael J. Heben, Adam B. Phillips, Rajendra R. Khanal, Victor V. Plotnikov, Alvin D. Compaan
  • Publication number: 20150221790
    Abstract: A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
    Type: Application
    Filed: August 13, 2013
    Publication date: August 6, 2015
    Applicant: The University of Toledo
    Inventors: Michael J. Heben, Adam B. Phillips, Rajendra R. Khanal, Victor V. Plotnikov, Alvin D. Compaan
  • Patent number: 8551396
    Abstract: Provided herein are materials that can achieve up to 14% hydrogen absorption by weight in ambient conditions, which is a marked improvement over the hydrogen absorption values found in the prior art. Further provided are experimental conditions necessary to produce these materials. In order to produce the hydrogen storage material, a transition metal (or Lithium) is vaporized in a pi bond gas in conditions that permit only a few bonding collisions to occur between the vaporized transition metal atoms and pi bond gas molecules before the resulting bonded material is collected.
    Type: Grant
    Filed: April 18, 2008
    Date of Patent: October 8, 2013
    Assignee: University of Virginia Patent Foundation
    Inventors: Bellave S. Shivaram, Adam B. Phillips
  • Publication number: 20100221137
    Abstract: Provided herein are materials that can achieve up to 14% hydrogen absorption by weight in ambient conditions, which is a marked improvement over the hydrogen absorption values found in the prior art. Further provided are experimental conditions necessary to produce these materials. In order to produce the hydrogen storage material, a transition metal (or Lithium) is vaporized in a pi bond gas in conditions that permit only a few bonding collisions to occur between the vaporized transition metal atoms and pi bond gas molecules before the resulting bonded material is collected.
    Type: Application
    Filed: April 18, 2008
    Publication date: September 2, 2010
    Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATION
    Inventors: Bellave S. Shivaram, Adam B. Phillips