Abstract: Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

Abstract: A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

Abstract: A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.

Abstract: Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

Abstract: Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

Abstract: A vertical FET includes a silicon carbide substrate having a top surface and a bottom surface opposite the top surface; a drain/collector contact on the bottom surface of the silicon carbide substrate; and an epitaxial structure on the top surface of the silicon carbide substrate having formed therein a first source/emitter implant. A gate dielectric is provided on a portion of the epitaxial structure. First source/emitter contact segments are spaced apart from each other and on the first source/emitter implant. A first elongated gate contact and a second elongated gate contact are on the gate dielectric and positioned such that the first source/emitter implant is below and between the first elongated gate contact and the second elongated gate contact. Inter-gate plates extend from at least one of the first elongated gate contact and the second elongated gate contact into spaces formed between the first source/emitter contact segments.

Abstract: Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

Abstract: A power converter module includes a baseplate, a substrate on the baseplate, one or more silicon carbide switching components on the substrate, and a housing over the baseplate, the substrate, and the one or more silicon carbide switching components. The housing has a footprint less than 25 cm2. Including a baseplate in a power converter module with a footprint less than 25 cm2 runs counter to accepted design principles for silicon and silicon carbide-based power converter modules, but may improve performance of the power converter module and/or decrease the cost of the power converter module.

Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.

Abstract: A vertical FET includes a silicon carbide substrate having a top surface and a bottom surface opposite the top surface; a drain/collector contact on the bottom surface of the silicon carbide substrate; and an epitaxial structure on the top surface of the silicon carbide substrate having formed therein a first source/emitter implant. A gate dielectric is provided on a portion of the epitaxial structure. First source/emitter contact segments are spaced apart from each other and on the first source/emitter implant. A first elongated gate contact and a second elongated gate contact are on the gate dielectric and positioned such that the first source/emitter implant is below and between the first elongated gate contact and the second elongated gate contact. Inter-gate plates extend from at least one of the first elongated gate contact and the second elongated gate contact into spaces formed between the first source/emitter contact segments.

Abstract: A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.

Abstract: AC to DC power electronic converter circuitry includes isolated converter circuitry and control circuitry coupled to the isolated converter circuitry. The isolated converter circuitry includes one or more wide bandgap switching components. The control circuitry is configured to drive at least one of the wide bandgap switching components such that the power electronic converter circuitry is configured to generate a DC output with an output power greater than 100W at an efficiency greater than 92%. Using wide bandgap components in the isolated converter circuitry allows the power electronic converter circuitry to achieve a high efficiency and high power density.

Abstract: A regenerative clamping circuit for a power converter using clamping diodes to transfer charge to a clamping capacitor and a regenerative converter to transfer charge out of the clamping capacitor back to the power supply input connection. The regenerative converter uses a switch connected to the midpoint of a series connected inductor and capacitor. The ends of the inductor and capacitor series are connected across the terminals of the power supply to be in parallel with the power supply.

Abstract: A power converter module includes a baseplate, a substrate on the baseplate, one or more silicon carbide switching components on the substrate, and a housing over the baseplate, the substrate, and the one or more silicon carbide switching components. The housing has a footprint less than 25 cm2. Including a baseplate in a power converter module with a footprint less than 25 cm2 runs counter to accepted design principles for silicon and silicon carbide-based power converter modules, but may improve performance of the power converter module and/or decrease the cost of the power converter module.

Abstract: A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

Abstract: A multichip power module directly connecting the busboard to a printed-circuit board that is attached to the power substrate enabling extremely low loop inductance for extreme environments such as high temperature operation. Wire bond interconnections are taught from the power die directly to the busboard further enabling enable low parasitic interconnections. Integration of on-board high frequency bus capacitors provide extremely low loop inductance. An extreme environment gate driver board allows close physical proximity of gate driver and power stage to reduce overall volume and reduce impedance in the control circuit. Parallel spring-loaded pin gate driver PCB connections allows a reliable and reworkable power module to gate driver interconnections.