Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory-cell strings extend through the insulative and conductive tiers. Conductive vias are formed above and individually directly electrically coupled to individual of the channel-material strings. Digitlines are formed above and are individually directly electrically coupled to a plurality of individual of the conductive vias there-below. The forming of the digitlines comprises forming lower elemental-form tungsten directly against tops of the individual conductive vias. The lower elemental-form tungsten is exposed to oxygen-containing gas or plasma to form WOx, where “x” is greater than 0 and no more than 3.0. The WOx has a maximum thickness greater than 0 and no more than 30 Angstroms in a finished construction. Upper elemental-form tungsten is physical vapor deposited directly against the WOx.