Abstract: An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: An optoelectronic semiconductor chip has a non-rectangular, parallelogram-shaped top surface and an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places. The top surface includes a radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges. The radiation exit surface has at least four vertices. The top surface includes at least one triangular connection area via which the active zone is electrically connectable.

Abstract: An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

Abstract: An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.

Abstract: An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film (1) having a first semiconductor material and an electron quantum film (2) having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film (4) having a third semiconductor material and separated by a first barrier layer (3), and the electron injector region (I) has at least one injector quantum film (5) having a fourth semiconductor material and separated by a second barrier layer (3).

Abstract: A goggle system is provided. The goggle system includes a computing device, a goggle device configured to be worn by a user and including a detector configured to simultaneously acquire image data of a subject in a first image mode and a second image mode, at least one eye assembly configured to display at least one of an image in the first image mode, an image in the second image mode, and a hybrid image including pixels of image data from the first image mode and pixels of image data from the second image mode, and a communications module configured to transmit acquired image data from the goggle device to the computing device.

Abstract: An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film (1) comprising a first semiconductor material and an electron quantum film (2) comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film (4) comprising a third semiconductor material and separated by a first barrier layer (3), and an electron injector region (I) following the latter and comprising at least one injector quantum film (5) comprising a fourth semiconductor material and separated by a second barrier layer (3). The first semiconductor material of the hole quantum film (1) is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 ?m.

Abstract: An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film (1) comprising a first semiconductor material and an electron quantum film (2) comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film (4) comprising a third semiconductor material and separated by a first barrier layer (3), and an electron injector region (I) following the latter and comprising at least one injector quantum film (5) comprising a fourth semiconductor material and separated by a second barrier layer (3). The first semiconductor material of the hole quantum film (1) is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 ?m.