Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: A gas-inlet element for a CVD reactor includes a gas distribution volume arranged rearward of a gas outlet plate, from which volume pipes having end portions protruding from the gas outlet plate on the front side emerge. The pipes extend into through openings in a shield plate assembly extending parallel to the gas outlet plate. The through openings have a first portion facing the gas outlet plate with a large diameter which is larger than the outer diameter of the respective end portions, and a second portion facing away from the gas outlet plate with a smaller diameter. In order to prevent temperature non-uniformities in the region of the through openings, the diameter of the second portion is smaller than the outer diameter of the respective end portions. The shield plate arrangement additionally consists of two shield plates with different thermal conductivities arranged one above another.

Abstract: A system, method and computer-readable storage medium are disclosed herein. The system includes one or more servers, one or more processors and a memory storing computer-readable instructions that, when executed by the one or more processors, cause the system to perform operations. The operations include receiving data and information associated with a user, and executing a first ML algorithm to select which other ML algorithm to execute to determine a value profile associated with a collateral asset. Additional ML algorithms are executed to generate a collateral profile associated with the collateral asset, an activity profile associated with a user, and a household profile associated with the user. Data from among the profiles is combined to generate a digital asset, and advanced analytics are applied to the digital asset, in connection with rules and policies, to identify a user-specific product offering. The user-specific product offering is communicated to the user.

Abstract: The landscaping tarpaulin is a collection device. The landscaping tarpaulin is configured for use in the collection of debris from the ground. The debris is placed on the landscaping tarpaulin. The landscaping tarpaulin forms a containment structure used to transport the debris for disposal. The landscaping tarpaulin comprises a tarpaulin structure, a plurality of magnets, a plurality of zippers, and a plurality of kick steps. The plurality of magnets, the plurality of zippers, and the plurality of kick steps attach to the tarpaulin structure. The plurality of magnets secure the corners of the tarpaulin structure together to form the containment structure of the tarpaulin structure. The plurality of zippers enclose the tarpaulin structure into a bag like containment structure. The plurality of kick steps form foot holds used to hold the tarpaulin structure in a fixed position as the debris is loaded onto the tarpaulin structure.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: In a device and a method for depositing at least one layer on at least one substrate, a first gas flow comprising a reactive gas is fed through a first gas inlet opening, and a second gas flow is fed through a second gas inlet opening, into at least one gas distribution volume of a gas inlet element. The inlet element has a gas outlet surface with a multiplicity of gas outlet openings which are fluidically connected to the gas distribution volume and through which the reactive gas enters the process chamber. Products of a physical or chemical reaction of the reactive gas that have entered the process chamber form a layer on the surface of the substrate. The two gas flows are fed into the same gas distribution volume, such that zones with different concentrations of the reactive gas form within the gas distribution volume.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: In a method for depositing semiconductor layers, a first process step is performed to deposit a layer containing gallium and a second process step is performed to deposit a layer containing indium. To prevent gallium from being incorporated from residues in the process chamber into the layer containing indium when the layer containing indium is deposited, a reactive gas containing indium is additionally supplied to the process chamber during the first process step and the first process parameters are adjusted such that the first layer contains no indium, or in an intermediate step between the first and second process steps, a reactive gas containing indium is supplied to the process chamber and the process parameters are adjusted such that no indium is deposited on the substrate during the intermediate step. In the second process step, the second process parameters are adjusted such that the second layer contains no gallium.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: A susceptor for a CVD-reactor includes insertion openings arranged in a bearing surface of the susceptor. An insertion section of a positioning element is inserted into one of the insertion openings. The insertion section forms positioning flanks with a section projecting from the insertion opening for fixing the position of a substrate. The insertion openings each have side walls and a base. The insertion section comprises bearing areas adjacent to the side walls of the insertion openings and a lower side of the positioning element facing the base of the insertion opening. The base of the insertion opening is separated from the lower side of the positioning element by a first distance. An edge protruding section of the positioning element is separated from a section of the bearing surface of the susceptor by a second distance.

Abstract: In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Abstract: A susceptor for a CVD-reactor includes insertion openings arranged in a bearing surface of the susceptor. An insertion section of a positioning element is inserted into one of the insertion openings. The insertion section forms positioning flanks with a section projecting from the insertion opening for fixing the position of a substrate. The insertion openings each have side walls and a base. The insertion section comprises bearing areas adjacent to the side walls of the insertion openings and a lower side of the positioning element facing the base of the insertion opening. The base of the insertion opening is separated from the lower side of the positioning element by a first distance. An edge protruding section of the positioning element is separated from a section of the bearing surface of the susceptor by a second distance.

Abstract: A CVD reactor includes a substrate holder with one or more pockets for holding one or more substrates. The CVD reactor also includes a heating system arranged below the substrate holder and spaced apart from the lower side of the substrate holder by a gap. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. A gas flushing device flushes the gap with flushing gases of different heat conductivity. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Abstract: A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. The device further includes carrying protrusions projecting from a bearing area base surface of the bearing area that is surrounded by the outline contour line. The carrying protrusions have contact surfaces that are raised in relation to the bearing area base surface, on which contact surfaces the substrate can be placed. In order to improve the temperature homogeneity of the surface of the substrate, each of the carrying protrusions originate from a recess of the bearing area base surface.

Abstract: A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. The device further includes carrying protrusions projecting from a bearing area base surface of the bearing area that is surrounded by the outline contour line. The carrying protrusions have contact surfaces that are raised in relation to the bearing area base surface, on which contact surfaces the substrate can be placed. In order to improve the temperature homogeneity of the surface of the substrate, each of the carrying protrusions originate from a recess of the bearing area base surface.

Abstract: According to one aspect, the subject matter described herein includes a system for performing Diameter overload control. The system occurs at a Diameter routing node. The system includes a network interface for receiving a Diameter message. The system also includes a Diameter overload control unit configured to detect an overload condition for a Diameter session associated with the Diameter message and to communicate an indication of the overload condition to a second Diameter node using a Diameter message defined for a purpose other than overload control.

Abstract: An apparatus and a method for a thermal treatment, in particular a coating of a substrate, includes a heating device which is regulated by a regulating device which interacts with a first temperature sensor device. In order to counteract a temperature drift of the first temperature sensor device, a second temperature sensor device is used to detect the temperature drift and recalibrate the first temperature sensor device. The second temperature sensor device is used to measure the surface temperature of a substrate. This measured value is compared with a desired value, and if the desired value deviates from the measured actual value, a correction factor is formed and is used to apply the measured value used to regulate the heating device to the first temperature sensor device in order to bring the actual temperature value measured by the second temperature sensor device closer to the associated desired temperature value.

Abstract: Methods, systems, and computer readable media for providing sedation service in a telecommunications network are disclosed. According to one aspect, a method for providing sedation service in a telecommunications network is provided. The method includes steps that are performed at a session initiation protocol (SIP) sedation node. The method includes receiving a first message sent from a SIP user agent and intended for a SIP server. The method further includes determining whether the SIP server is unavailable. The method further includes responsive to a determination that the SIP server is unavailable to respond to the first message, sending, to the SIP client, a SIP sedation message for reducing the number or frequency of messages sent by the SIP user agent to the SIP server.

Abstract: Methods, systems, and computer readable media for providing sedation service in a telecommunications network are disclosed. According to one aspect, a method for providing sedation service in a telecommunications network is provided. The method includes steps that are performed at a session initiation protocol (SIP) sedation node. The method includes receiving a first message sent from a SIP user agent and intended for a SIP server. The method further includes determining whether the SIP server is unavailable. The method further includes responsive to a determination that the SIP server is unavailable to respond to the first message, sending, to the SIP client, a SIP sedation message for reducing the number or frequency of messages sent by the SIP user agent to the SIP server.

Abstract: The invention relates to a device for coating substrates having a process chamber (1) disposed in a reactor housing and a two-part, substantially cup-shaped susceptor (2, 3) disposed therein, forming an upper susceptor part (2) with the cup floor thereof having a flat plate (2?) and a lower susceptor part (3) with the cup side walls thereof, the outer side (4) of the plate (2?) of the upper susceptor part (2) facing upwards toward the process chamber (1) and forming a contact surface for at least one substrate, the upper susceptor part (2) contacting a front edge (3?) of the lower susceptor part (3) at the edge of said upper susceptor part (2), the lower susceptor part (3) being supported by a susceptor carrier (6), and heating zones (A, B, C) for heating the upper susceptor part (2) being disposed below the plate (2?).