Abstract: An opening is formed within insulative material to proximate a silicon comprising substrate. Titanium is deposited within the opening to form a first layer comprising titanium suicide. It is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a second layer comprising titanium nitride. Titanium is deposited within the opening to form an elemental titanium comprising third layer. The third layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a layer comprising titanium nitride. A metal is deposited within the opening over the transformed third layer. Any remnant of first layer, second layer, third layer, transformed third layer and metal materials is removed from over the insulative material to form an isolated conductive contact within the opening. At least the depositing to form the first layer is by chemical vapor deposition.

Abstract: A method of forming a conductive connection between a first region and a second region includes forming a first titanium comprising layer over and in electrical connection with the first region. The first layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a second layer comprising titanium nitride. An elemental titanium comprising third layer is formed over the second layer. The third layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a layer comprising titanium nitride. The second region is formed over and in electrical connection with the transformed third layer. A method of forming a conductive line includes a conductively doped silicon comprising semiconductive material being formed. Titanium is deposited over the semiconductive material to form a first layer in electrical connection with the semiconductive material.

Abstract: A method of forming a conductive connection between a first region and a second region includes forming a first titanium comprising layer over and in electrical connection with the first region. The first layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a second layer comprising titanium nitride. An elemental titanium comprising third layer is formed over the second layer. The third layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a layer comprising titanium nitride. The second region is formed over and in electrical connection with the transformed third layer. A method of forming a conductive line includes a conductively doped silicon comprising semiconductive material being formed. Titanium is deposited over the semiconductive material to form a first layer in electrical connection with the semiconductive material.